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NESG2031M16

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG2031M16

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.@

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2031M16

HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

NESG2031M16-A

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG2031M16-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.@

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2031M16-T3

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG2031M16-T3

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.@

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2031M16-T3-A

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG2031M16-T3-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.@

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2031M16-T3-A

HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

詳細(xì)參數(shù)

  • 型號(hào)：

    NESG2031M16

  • 功能描述：

    射頻硅鍺晶體管 RO 551-NESG2031M16-A

  • RoHS：

    否

  • 制造商：

    Infineon Technologies 發(fā)射極 - 基極電壓

  • 封裝：

    Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NEC
24+
6-PINMINIMOLD
4897
絕對(duì)原裝!現(xiàn)貨熱賣!
 詢價(jià)
NEC
24+
6-PINM
16200
新進(jìn)庫存/原裝
 詢價(jià)
NEC
6000
面議
19
DIP/SMD
 詢價(jià)
NEC
22+
6-PINM
10000
原裝正品優(yōu)勢(shì)現(xiàn)貨供應(yīng)
 詢價(jià)
NEC
24+
6-PINM
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價(jià)
CEL
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
CEL
24+
原廠原裝
5000
原裝正品
 詢價(jià)
6-PINM
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價(jià)
RENESAS/瑞薩
22+
SOT-563
9600
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
 詢價(jià)
NEC
23+
SOT563
27000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
更多NESG2031M16供應(yīng)商 更新時(shí)間2025-2-8 15:13:00

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