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NP82N055EHE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP82N055EHE-E1-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=3500pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N055EHE-E2-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=3500pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N055ELE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) ?Lowinputcapacitance Ciss=4

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N055ELE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP82N055ELE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP82N055ELE-E1-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP82N055ELE-E1-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) ?Lowinputcapacitance Ciss=4

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N055ELE-E2-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) ?Lowinputcapacitance Ciss=4

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N055ELE-E2-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    NP8

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NATLINEAR/南麟
24+
DFN56
78848
原裝正品現(xiàn)貨供應(yīng)
 詢價(jià)
NEC
24+
TO-263
8866
詢價(jià)
NEC
24+
SOT-263
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
NEC
1822+
TO-263
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
NEC
6000
面議
19
TO-263
 詢價(jià)
NEC
18+
TO-263
41200
原裝正品,現(xiàn)貨特價(jià)
 詢價(jià)
AVAGO/安華高
23+
SOP-12
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
NEC
21+
SOT-263
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
RENESAS/瑞薩
2022+
TO-263
50000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
RENESAS/瑞薩
22+
TO-263
100000
代理渠道/只做原裝/可含稅
 詢價(jià)
更多NP8供應(yīng)商 更新時(shí)間2025-4-23 17:10:00

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