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NP82N055NUG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N055NUG-S18-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N055MUGandNP82N055NUGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Nonlogiclevel ?Superlowon-stateresistance RDS(on)=6.0mΩMAX.(VGS=10V,ID=41A) ?Highcurrentrating ID(DC)=±82A ?Low

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N055PUG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N06CLC

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=9.0mW(MAX.)(VGS=10V,ID=4

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06CLD

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=8.5mW(MAX.)(VGS=10V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06CLD

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N06DLC

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=9.0mW(MAX.)(VGS=10V,ID=4

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06DLD

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=8.5mW(MAX.)(VGS=10V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06DLD

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N06ELC

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=9.0mW(MAX.)(VGS=10V,ID=4

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

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UTC/友順
23+
TO-252
69820
終端可以免費(fèi)供樣,支持BOM配單!
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RENESAS/瑞薩
22+
TO-263
20000
保證原裝正品,假一陪十
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RENESAS/瑞薩
2022+
TO-263
50000
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R
23+
TO-263
6000
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RENESAS/瑞薩
22+
TO-263
100000
代理渠道/只做原裝/可含稅
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RENESAS/瑞薩
23+
TO-263
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
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2022+
TO-263
30000
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RENESAS/瑞薩
22+
TO-263
12500
瑞薩全系列在售,終端可出樣品
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RENESAS/瑞薩
22+
TO-263
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)
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R
25+
TO-263
12300
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更多NP8供應(yīng)商 更新時(shí)間2025-4-23 13:52:00

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