首頁 >NP8>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

NP82P04PLF-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82P04PLFisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=8mΩMAX.(VGS=?10V,ID=?41A) RDS(on)2=12mΩMAX.(VGS=?4.5V,ID=?41A) ?Lowinputcapacitance Cis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP83P04PDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP83P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=5.3mΩMAX.(VGS=?10V,ID=?41.5A) RDS(on)2=8.0mΩMAX.(VGS=?4.5V,ID=?41.5A) ?Highcurrentrating:I

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP83P04PDG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP83P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=5.3mΩMAX.(VGS=?10V,ID=?41.5A) RDS(on)2=8.0mΩMAX.(VGS=?4.5V,ID=?41.5A) ?Highcurrentrating:I

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP83P04PDG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP83P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=5.3mΩMAX.(VGS=?10V,ID=?41.5A) RDS(on)2=8.0mΩMAX.(VGS=?4.5V,ID=?41.5A) ?Highcurrentrating:I

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP83P06PDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP83P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=8.8mΩMAX.(VGS=?10V,ID=?41.5A) RDS(on)2=12mΩMAX.(VGS=?4.5V,ID=?41.5A) ?Highcurrentrating:ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP83P06PDG

-60V – -83A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=8.8m?Max.(VGS=-10V,ID=-41.5A) RDS(on)=12m?Max.(VGS=-4.5V,ID=-41.5A) ?Lowinputcapacitance:Ciss

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP83P06PDG-E1-AY

-60V – -83A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=8.8m?Max.(VGS=-10V,ID=-41.5A) RDS(on)=12m?Max.(VGS=-4.5V,ID=-41.5A) ?Lowinputcapacitance:Ciss

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP83P06PDG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP83P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=8.8mΩMAX.(VGS=?10V,ID=?41.5A) RDS(on)2=12mΩMAX.(VGS=?4.5V,ID=?41.5A) ?Highcurrentrating:ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP83P06PDG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP83P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=8.8mΩMAX.(VGS=?10V,ID=?41.5A) RDS(on)2=12mΩMAX.(VGS=?4.5V,ID=?41.5A) ?Highcurrentrating:ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP84N03KUF

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheNP84N03KUFisN-channelMOSFieldEffect Transistordesignedforhighcurrentapplications. FEATURES ?Channeltemperature175degreerating ?Superlowon-stateresistance RDS(on)=3.0mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
NATLINEAR/南麟
24+
TO-252-2L
156000
專營NATLINEAR南麟原裝正品保障
 詢價
R
24+
T0-220
5000
只做原裝公司現(xiàn)貨
 詢價
R
24+
T0-220
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
RENESAS/瑞薩
TO-220
22+
6000
十年配單,只做原裝
 詢價
RENESAS/瑞薩
23+
TO-220
6000
原裝正品，支持實單
 詢價
RENESAS/瑞薩
2022+
TO-220
30000
進口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價
RENESAS/瑞薩
22+
TO-220
12500
瑞薩全系列在售,終端可出樣品
 詢價
RENESAS/瑞薩
20+
TO-220
32500
現(xiàn)貨很近!原廠很遠!只做原裝
 詢價
RENESAS/瑞薩
22+
TO-220
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
 詢價
R
25+
T0-TO-220
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
更多NP8供應(yīng)商 更新時間2025-4-23 9:36:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多