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NP82N06PLG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.7mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N10PUF

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=15mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N10PUF

MOS FIELD EFFECT TRANSISTOR

Description TheNP82N10PUFisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)=15mΩMAX.(VGS=10V,ID=41A) ?LowCiss:Ciss=2900pFTYP.(VDS=25V,VGS=0V) ?Designedforautomotivea

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N10PUF-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP82N10PUFisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)=15mΩMAX.(VGS=10V,ID=41A) ?LowCiss:Ciss=2900pFTYP.(VDS=25V,VGS=0V) ?Designedforautomotivea

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N10PUF-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP82N10PUFisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)=15mΩMAX.(VGS=10V,ID=41A) ?LowCiss:Ciss=2900pFTYP.(VDS=25V,VGS=0V) ?Designedforautomotivea

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82P04PLF

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION TheNP82P04PLFisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=8mΩMAX.(VGS=?10V,ID=?41A) RDS(on)2=12mΩMAX.(VGS=?4.5V,ID=?41A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82P04PLF

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82P04PLFisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=8mΩMAX.(VGS=?10V,ID=?41A) RDS(on)2=12mΩMAX.(VGS=?4.5V,ID=?41A) ?Lowinputcapacitance Cis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP82P04PLF-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82P04PLFisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=8mΩMAX.(VGS=?10V,ID=?41A) RDS(on)2=12mΩMAX.(VGS=?4.5V,ID=?41A) ?Lowinputcapacitance Cis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP82P04PLF-E1-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION TheNP82P04PLFisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=8mΩMAX.(VGS=?10V,ID=?41A) RDS(on)2=12mΩMAX.(VGS=?4.5V,ID=?41A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82P04PLF-E2-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION TheNP82P04PLFisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=8mΩMAX.(VGS=?10V,ID=?41A) RDS(on)2=12mΩMAX.(VGS=?4.5V,ID=?41A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號：

    NP8

  • 制造商：

    Renesas Electronics Corporation

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
Renesas
21+
-
50
全新原裝鄙視假貨
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RENESAS/瑞薩
23+
NA
33000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
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RENESAS/瑞薩
TO-263
22+
56000
全新原裝進(jìn)口,假一罰十
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NEC
24+
TO-263
8866
詢價(jià)
NEC
23+
TO-263
11837
全新原裝
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NEC
6000
面議
19
TO-263
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AVAGO/安華高
23+
SOP-8
69820
終端可以免費(fèi)供樣,支持BOM配單!
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VBsemi
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
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VB
21+
TO-263
10000
原裝現(xiàn)貨假一罰十
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R
TO-263
22+
6000
十年配單,只做原裝
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更多NP8供應(yīng)商 更新時(shí)間2025-4-23 17:50:00

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