STGW35HF60WDI

Marking：GW35HF60WDI；Package：TO-247；35 A, 600 V ultrafast IGBT with low drop diode

Description ThisultrafastIGBTisdevelopedusinganew planartechnologytoyieldadevicewithtighter switchingenergyvariation(Eoff)versus temperature.ThesuffixWdenotesasubsetof productsdesignedforhighswitchingfrequency operation(over100kHz). Features ■ImprovedEo

STGW35NB60S

Marking：GW35NB60S；Package：TO-247；N-channel 35A - 600V - TO-247 Low drop PowerMESH??IGBT

Description Usingthelatesthighvoltagetechnologybasedon apatentedstriplayout,STMicroelectronicshas designedanadvancedfamilyofIGBTs,the PowerMESH?IGBTs,withoutstanding performances. Features ■Lowon-voltagedrop(VCEsat) ■Lowinputcapacitance ■Highcurrentcapabil

STGW35NC60WD

Marking：GW35NC60WD；Package：TO-247；40 A, 600 V ultra fast IGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ■Highfrequencyoperation ■LowerCRES/CIESratio(nocross-conduction susceptibility) ■Verysoftultrafastrecovery

STGW38IH130D

33 A - 1300 V - very fast IGBT

Description ThisdeviceisaveryfastIGBTdevelopedusingadvancedPowerMESH?technology.Thisprocessguaranteesanexcellenttrade-offbetweenswitchingperformanceandlowon-statebehavior.Thisdeviceiswell-suitedforresonantorsoft-switchingapplications. Features ■Lowsaturationv

STGW39NC60VD

Marking：GW39NC60VD；Package：TO-247；N-CHANNEL 40A - 600V - TO-247 Very Fast PowerMESH??IGBT

Description ThisIGBTutilizestheadvancedPowerMESH?processresultinginanexcellenttrade-offbetweenswitchingperformanceandlowon-statebehaviour. Features ■LowCRES/CIESratio(nocrossconductionsusceptibility) ■IGBTco-packagedwithultrafastfree-wheelingdiode

STGW40H120DF2

Marking：G40H120DF2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 40 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThesedevicesarepartoftheHseries ofIGBTs,whichrepresentsanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofhigh switchingfrequenc

STGW40H120DF2

Trench gate Field-Stop IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.1V@IC=40A ·HighCurrentCapability ·HighInputImpedance ·Veryfastrecoveryantiparalleldiode APPLICATIONS ·Uninterruptiblepowersupply ·Weldingmachines ·Photovoltaicinverters ·Highfrequencyconverters

STGW40H60DLFB

Marking：GW40H60DLFB；Package：TO-247；Trench gate field-stop IGBT, HB series 600 V, 40 A high speed

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgatefieldstopstructure.ThedeviceispartofthenewHBseriesofIGBTs,whichrepresentanoptimumcompromisebetweenconductionandswitchinglossestomaximizetheefficiencyofanyfrequencyconverter.Furth

STGW40H65DFB

Marking：GW40H65DFB；Package：TO-247；Trench gate field-stop 650 V, 40 A high speed HB series IGBT

Features ?Maximumjunctiontemperature:TJ=175°C ?Highspeedswitchingseries ?Minimizedtailcurrent ?Lowsaturationvoltage:VCE(sat)=1.6V(typ.)@IC=40A ?Tightparameterdistribution ?Safeparalleling ?PositiveVCE(sat)temperaturecoefficient ?Lowthermalresistance

STGW40M120DF3

Trench and Field Stop IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.3V@IC=40A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·SynchronousRectificationinSMPS ·AutomotiveChargers ·UPS,PFC ·HighVoltageAuxiliaries