STGWA25H120F2

Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThesedevicesarepartoftheHseries ofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofhigh switchingfrequency

STGWA25M120DF3

Marking：G25M120DF3；Package：TO-247；Trench gate field-stop IGBT, M series 1200 V, 25 A low loss

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgatefield-stopstructure.ThedeviceispartoftheMseriesofIGBTs,whichrepresentanoptimumcompromiseinperformancetomaximizetheefficiencyofinvertersystemswherelow-lossandshortcircuitcapability

STGWA25S120DF3

Marking：G25S120DF3；Package：TO-247；Trench gate field-stop IGBT, S series 1200 V, 25 A low drop

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThedeviceispartoftheSseriesof 1200VIGBTswhichistailoredtomaximize efficiencyoflowfrequencyindustrialsystems. Furthermore,apositiveVCE(sat)temperature coeffici

STGWA30H60DFB

Marking：GWA30H60DFB；Package：TO-247；Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThesedevicesarepartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching losstomaximizetheefficiencyofanyfrequency convert

STGWA30H65DFB2

Marking：G30H65DFB2；Package：TO-247；Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package

Features ?Maximumjunctiontemperature:TJ=175°C ?LowVCE(sat)=1.65V(typ.)@IC=30A ?Veryfastandsoftrecoveryco-packageddiode ?Minimizedtailcurrent ?Tightparameterdistribution ?Lowthermalresistance ?PositiveVCE(sat)temperaturecoefficient Applications ?We

STGWA30N120KD

Marking：GWA30N120KD；Package：TO-247；30 A, 1200 V short circuit rugged IGBT with Ultrafast diode

Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH?p

STGWA35HF60WDI

Marking：35HF60WDI；Package：TO-247；35 A, 600 V ultrafast IGBT with low drop diode

Description ThisultrafastIGBTisdevelopedusinganew planartechnologytoyieldadevicewithtighter switchingenergyvariation(Eoff)versus temperature.ThesuffixWdenotesasubsetof productsdesignedforhighswitchingfrequency operation(over100kHz). Features ■ImprovedEo

STGWA40H120DF2

Marking：G40H120DF2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 40 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThesedevicesarepartoftheHseries ofIGBTs,whichrepresentsanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofhigh switchingfrequenc

STGWA40H60DLFB

Marking：G40H60DLFB；Package：TO-247；Trench gate field-stop IGBT, HB series 600 V, 40 A high speed in a TO-247 long leads package

Features ?Maximumjunctiontemperature:TJ=175°C ?Highspeedswitchingseries ?Minimizedtailcurrent ?Lowsaturationvoltage:VCE(sat)=1.6V(typ.)@IC=40A ?Tightparameterdistribution ?Safeparalleling ?Lowthermalresistance ?LowVFsoftrecoveryco-packageddiode A

STGWA40HP65FB2

Marking：G40HP65FB2；Package：TO-247；Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package

Features ?Maximumjunctiontemperature:TJ=175°C ?LowVCE(sat)=1.55V(typ.)@IC=40A ?Co-packagedprotectiondiode ?Minimizedtailcurrent ?Tightparameterdistribution ?Lowthermalresistance ?PositiveVCE(sat)temperaturecoefficient Applications ?Welding ?Powerfac