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STGW25H120DF2

Marking：G25H120DF2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefield-stopstructure.ThesedevicesarepartoftheHseriesofIGBTs,whichrepresentanoptimumcompromisebetweenconductionandswitchinglossestomaximizetheefficiencyofhighswitchingfrequencyconve

STMICROELECTRONICSSTMicroelectronics

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STGW25H120F2

Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThesedevicesarepartoftheHseries ofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofhigh switchingfrequency

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGW25M120DF3

Marking：G25M120DF3；Package：TO-247；Trench gate field-stop IGBT, M series 1200 V, 25 A low loss

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgatefield-stopstructure.ThedeviceispartoftheMseriesofIGBTs,whichrepresentanoptimumcompromiseinperformancetomaximizetheefficiencyofinvertersystemswherelow-lossandshortcircuitcapability

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGW25S120DF3

Marking：G25S120DF3；Package：TO-247；Trench gate field-stop IGBT, S series 1200 V, 25 A low drop

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThedeviceispartoftheSseriesof 1200VIGBTswhichistailoredtomaximize efficiencyoflowfrequencyindustrialsystems. Furthermore,apositiveVCE(sat)temperature coeffici

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGW28IH125DF

Marking：G28IH125DF；Package：TO-247；1250 V, 30 A IH series trench gate field-stop IGBT

Description TheseIGBTsaredevelopedusinganadvanced proprietarytrenchgatefield-stopstructureand performanceisoptimizedinbothconductionand switchinglosses.Afreewheelingdiodewithalow dropforwardvoltageisco-packaged.Theresultis aproductspecificallydesignedtomax

STMICROELECTRONICSSTMicroelectronics

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STGW30H60DF

Marking：GW30H60DF；Package：TO-247；600 V, 30 A high speed trench gate field-stop IGBT

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGW30H60DFB

Marking：GW30H60DFB；Package：TO-247；Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThesedevicesarepartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching losstomaximizetheefficiencyofanyfrequency convert

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGW30H60DLFB

Marking：GW30H60DLFB；Package：TO-247；Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThedeviceispartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofany frequencyconve

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGW30N120KD

Marking：GW30N120KD；Package：TO-247；30 A, 1200 V short circuit rugged IGBT with Ultrafast diode

Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH?p

STMICROELECTRONICSSTMicroelectronics

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STGW30N120KD_V01

30 A, 1200 V short circuit rugged IGBT with Ultrafast diode

Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH?p

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

產(chǎn)品屬性

  • 產(chǎn)品編號：

    STGIB10CH60S-L

  • 制造商：

    STMicroelectronics

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 功率驅(qū)動器模塊

  • 系列：

    SLLIMM?

  • 包裝：

    卷帶（TR）

  • 類型：

    IGBT

  • 配置：

    三相反相器

  • 電壓 - 隔離：

    1500Vrms

  • 安裝類型：

    通孔

  • 封裝/外殼：

    26-PowerDIP 模塊（1.146"，29.10mm）

  • 描述：

    SLLIMM 2ND SERIES IPM, 3-PHASE I

供應(yīng)商型號品牌批號封裝庫存備注價格
意法半導(dǎo)體
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價
ST/意法
23+
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
ST
1634+
NA
200
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
ST
24+
NA
200
只做原裝進(jìn)口!正品支持實(shí)單!
 詢價
ST/意法
22+
26-PowerDIP
12000
只做原裝,全新原裝進(jìn)口,假一罰十
 詢價
ST
150
只做正品
 詢價
ST
21+
原廠原封
23480
詢價
ST(意法)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價
STMicroelectronics
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價
ST
23+
DIP-IPM
5000
一級代理原裝現(xiàn)貨。
 詢價
更多STG供應(yīng)商 更新時間2025-4-23 11:17:00

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