STGW60H65F

Marking：GW60H65F；Package：TO-247；60 A, 650 V field stop trench gate IGBT

Features ■Highspeedswitching ■Tightparameterdistribution ■Safeparalleling ■Lowthermalresistance ■6μsshort-circuitwithstandtime ■Leadfreepackage Applications ■Photovoltaicinverters ■Uninterruptiblepowersupply ■Welding ■Powerfactorcorrection ■Highswitching

STGW60H65F_V01

60 A, 650 V field stop trench gate IGBT

Features ■Highspeedswitching ■Tightparameterdistribution ■Safeparalleling ■Lowthermalresistance ■6μsshort-circuitwithstandtime ■Leadfreepackage Applications ■Photovoltaicinverters ■Uninterruptiblepowersupply ■Welding ■Powerfactorcorrection ■Highswitching

STGW60V60DF

Marking：GW60V60DF；Package：TO-247；Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features ?Maximumjunctiontemperature:TJ=175°C ?Tail-lessswitchingoff ?VCE(sat)=1.85V(typ.)@IC=60A ?Tightparameterdistribution ?Safeparalleling ?Lowthermalresistance ?Veryfastsoftrecoveryantiparalleldiode Applications ?Photovoltaicinverters ?Uninterr

STGW60V60DF_V01

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features ?Maximumjunctiontemperature:TJ=175°C ?Tail-lessswitchingoff ?VCE(sat)=1.85V(typ.)@IC=60A ?Tightparameterdistribution ?Safeparalleling ?Lowthermalresistance ?Veryfastsoftrecoveryantiparalleldiode Applications ?Photovoltaicinverters ?Uninterr

STGWA15H120DF2

Marking：G15H120DF2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefield-stopstructure.ThesedevicesarepartoftheimprovedHseriesofIGBTs,whichrepresentanoptimumcompromisebetweenconductionandswitchinglossestomaximizetheefficiencyofhighfrequencyconver

STGWA15H120F2

Marking：G15H120F2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.Thesedevicesarepartoftheimproved HseriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching losstomaximizetheefficiencyofhighfrequency co

STGWA15M120DF3

Marking：G15M120DF3；Package：TO-247；Trench gate field-stop IGBT, M series 1200 V, 15 A low loss

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgatefield-stopstructure.ThedeviceispartoftheMseriesofIGBTs,whichrepresentanoptimumcompromiseinperformancetomaximizetheefficiencyofinvertersystemswherelow-lossandshortcircuitcapability

STGWA15S120DF3

Marking：G15S120DF3；Package：TO-247；Trench gate field-stop IGBT, S series 1200 V, 15 A low drop

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThedeviceispartoftheSseriesof 1200VIGBTswhichistailoredtomaximize efficiencyoflowfrequencyindustrialsystems. Furthermore,apositiveVCE(sat)temperature coeffici

STGWA20HP65FB2

Marking：G20HP65FB2；Package：TO-247；Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO?247 long leads package

Features ?Maximumjunctiontemperature:TJ=175°C ?LowVCE(sat)=1.65V(typ.)@IC=20A ?Co-packagedprotectiondiode ?Minimizedtailcurrent ?Tightparameterdistribution ?Lowthermalresistance ?PositiveVCE(sat)temperaturecoefficient Applications ?Welding ?Powerfa

STGWA25H120DF2

Marking：G25H120DF2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefield-stopstructure.ThesedevicesarepartoftheHseriesofIGBTs,whichrepresentanoptimumcompromisebetweenconductionandswitchinglossestomaximizetheefficiencyofhighswitchingfrequencyconve