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STGWF30NC60S

Marking：GWF30NC60S；Package：TO-3PF；30 A, 600 V, fast IGBT

Features ■Optimizedperformanceformediumoperating frequenciesupto5kHzinhardswitching ■Lowon-voltagedrop(VCE(sat)) ■Highcurrentcapability Application Motordrive Description ThisdeviceutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betw

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGWS38IH130D

33 A - 1300 V - very fast IGBT

Description ThisdeviceisaveryfastIGBTdevelopedusingadvancedPowerMESH?technology.Thisprocessguaranteesanexcellenttrade-offbetweenswitchingperformanceandlowon-statebehavior.Thisdeviceiswell-suitedforresonantorsoft-switchingapplications. Features ■Lowsaturationv

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGWT15H60F

Marking：G15H60F；Package：TO-3P；Trench gate field-stop IGBT, H series 600 V, 15 A high speed

Features ?Highspeedswitching ?Tightparameterdistribution ?Safeparalleling ?Lowthermalresistance ?Short-circuitrated Applications ?Motorcontrol ?UPS ?PFC Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.Th

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGWT20H60DF

Marking：GWT20H60DF；Package：TO-3P；600 V, 20 A high speed trench gate field-stop IGBT

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGWT20IH125DF

Marking：G20IH125DF；Package：TO-3P；1250 V, 20 A IH series trench gate field-stop IGBT

Description TheseIGBTsaredevelopedusinganadvanced proprietarytrenchgatefield-stopstructureand performanceisoptimizedinbothconductionand switchinglosses.Afreewheelingdiodewithalow dropforwardvoltageisco-packaged.Theresultis aproductspecificallydesignedtomax

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGWT28IH125DF

Marking：G28IH125DF；Package：TO-3P；1250 V, 30 A IH series trench gate field-stop IGBT

Description TheseIGBTsaredevelopedusinganadvanced proprietarytrenchgatefield-stopstructureand performanceisoptimizedinbothconductionand switchinglosses.Afreewheelingdiodewithalow dropforwardvoltageisco-packaged.Theresultis aproductspecificallydesignedtomax

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGWT30H60DFB

Marking：GWT30H60DFB；Package：TO-3P；Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThesedevicesarepartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching losstomaximizetheefficiencyofanyfrequency convert

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGWT38IH130D

33 A - 1300 V - very fast IGBT

Description ThisdeviceisaveryfastIGBTdevelopedusingadvancedPowerMESH?technology.Thisprocessguaranteesanexcellenttrade-offbetweenswitchingperformanceandlowon-statebehavior.Thisdeviceiswell-suitedforresonantorsoft-switchingapplications. Features ■Lowsaturationv

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGWT40H60DLFB

Marking：GWT40H60DLFB；Package：TO-3P；Trench gate field-stop IGBT, HB series 600 V, 40 A high speed

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgatefieldstopstructure.ThedeviceispartofthenewHBseriesofIGBTs,whichrepresentanoptimumcompromisebetweenconductionandswitchinglossestomaximizetheefficiencyofanyfrequencyconverter.Furth

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGWT60H60DLFB

Marking：GWT60H60DLFB；Package：TO-3P；Trench gate field-stop IGBT, HB series 600 V, 60 A high speed

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgateandfieldstopstructure.ThedeviceispartofthenewHBseriesofIGBTs,whichrepresentanoptimumcompromisebetweenconductionandswitchinglossestomaximizetheefficiencyofanyfrequencyconverter.F

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    STG

  • 功能描述：

    IGBT 晶體管 N-Ch 600 Volt 7 Amp

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
60
全新原裝!優(yōu)勢(shì)庫(kù)存熱賣(mài)中!
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ST
24+
TO252DPAK
8866
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ST全系列
25+23+
DPAK
26278
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
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ST
1926+
DPAK
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
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ST
24+
TO-252
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
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STM原廠目錄
24+
DPAK
28500
授權(quán)代理直銷(xiāo),原廠原裝現(xiàn)貨,假一罰十,特價(jià)銷(xiāo)售
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ST/意法
18+PBF
TO-252-2
664
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
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ST/意法
23+
TO-252-2
50000
全新原裝正品現(xiàn)貨,支持訂貨
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ST
22+
TO-252-2
6000
十年配單,只做原裝
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ST
0628+
TO-252
7
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更多STG供應(yīng)商 更新時(shí)間2025-4-23 17:42:00

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