STGWT60H65DFB

Marking：GWT60H65DFB；Package：TO-3P；Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefieldstop structure.ThesedevicesarepartofthenewHBseriesofIGBTs,which representanoptimumcompromisebetweenconductionandswitchinglossto maximizetheefficiencyofanyfrequencyconverter.

STGWT60H65F

Marking：G60H65F；Package：TO-3P；60 A, 650 V field stop trench gate IGBT

Features ■Highspeedswitching ■Tightparameterdistribution ■Safeparalleling ■Lowthermalresistance ■6μsshort-circuitwithstandtime ■Leadfreepackage Applications ■Photovoltaicinverters ■Uninterruptiblepowersupply ■Welding ■Powerfactorcorrection ■Highswitching

STGWT60V60DF

Marking：GWT60V60DF；Package：TO-3P；Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features ?Maximumjunctiontemperature:TJ=175°C ?Tail-lessswitchingoff ?VCE(sat)=1.85V(typ.)@IC=60A ?Tightparameterdistribution ?Safeparalleling ?Lowthermalresistance ?Veryfastsoftrecoveryantiparalleldiode Applications ?Photovoltaicinverters ?Uninterr

STGY50NB60

N-CHANNEL 50A - 600V MAX247 PowerMESH IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperfomances.Thesuffix”H”identifiesafamilyoptimizedtoachieveverylowswitchingtimesforhighfrequen

STGY50NB60HD

N-CHANNEL 50A - 600V MAX247 PowerMESH IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperfomances.Thesuffix”H”identifiesafamilyoptimizedtoachieveverylowswitchingtimesforhighfrequen

STGY50NC60WD

Trench and Field Stop IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.5V@IC=40A ·HighCurrentCapability ·HighInputImpedance ·FastSwithching ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·SynchronousRectificationinSMPS ·AutomotiveChargers ·UPS,PFC ·Hig

STGYA120M65DF2AG

Marking：G120M65DF2AG；Package：Max247；Automotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads package

Features ?AEC-Q101qualified ?6μsofshort-circuitwithstandtime ?VCE(sat)=1.65V(typ.)@IC=120A ?Tightparameterdistribution ?Saferparalleling ?PositiveVCE(sat)temperaturecoefficient ?Lowthermalresistance ?Softandveryfastrecoveryantiparalleldiode ?Maximumj

STGYA50H120DF2

Trench gate field-stop, 1200 V, 50 A, high-speed H series IGBT in a Max247 long leads package

Features ?Maximumjunctiontemperature:TJ=175°C ?5μsofshort-circuitwithstandtime ?LowVCE(sat)=2.1V(typ.)@IC=50A ?Tightparameterdistribution ?PositiveVCE(sat)temperaturecoefficient ?Lowthermalresistance ?Veryfastrecoveryantiparalleldiode Description T

STGYA50M120DF3

Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT in a Max247 long leads package

Features ?Maximumjunctiontemperature:TJ=175°C ?10μsofshort-circuitwithstandtime ?LowVCE(sat)=1.7V(typ.)@IC=50A ?Tightparameterdistribution ?PositiveVCE(sat)temperaturecoefficient ?Lowthermalresistance ?Soft-andfast-recoveryantiparalleldiode Descript

STGYA75H120DF2

Trench gate field-stop, 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads package

Features ?Maximumjunctiontemperature:TJ=175°C ?5μsofshort-circuitwithstandtime ?VCE(sat)=2.1V(typ.)@IC=75A ?Tightparameterdistribution ?PositiveVCE(sat)temperaturecoefficient ?Lowthermalresistance ?Veryfastrecoveryantiparalleldiode Description This