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IRF630

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF630

N-CHANNEL200V-0.35ihm-9A-TO-220/FPMESHOVERLAY]MOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. Generalfeatures ■Extremelyhighdv/dtcapability ■Verylowintrinsic

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630

9A,200V,0.400Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

IRF630

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF630

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.25? ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACHTERIZATION APPLICATIONS ■HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCO

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630

PowerMOSFET

PowerMOSFET VDSS=200V,RDS(on)=0.40ohm,ID=9.0A

TEL

TRANSYS Electronics Limited

IRF630

POWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ◆Dynamicdv/dtRating ◆RepetitiveAvalancheRated ◆FastSwitching ◆EaseofParalleling ◆SimpleDrive

SUNTAC

Suntac Electronic Corp.

IRF630

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconvert

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

IRF630

N-channel200V-0.35廓-9ATO-220/TO-220FPMeshoverlay??IIPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
N/A
23+
SMDDIP
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
IR
22+
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
7000
詢價(jià)
IR
2021+
DIP
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
A
24+
b
31
詢價(jià)
IR
1738+
NA
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價(jià)
IR
23+
NA
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IR
21+
NA
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
更多IRE630N供應(yīng)商 更新時(shí)間2025-2-5 11:10:00

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