首頁 >IRFB18N50K>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFB18N50K | Power MOSFET(Vdss=500V, Rds(on)max=0.26ohm, Id=27A) Applications 1.SwitchModePowerSupply(SMPS) 2.UninterruptiblePowerSupply 3.HighSpeedPowerSwitching 4.HardSwitchedandHighFrequencyCircuits | IRF International Rectifier | IRF | |
IRFB18N50K | Power MOSFET 1.LowGateChargeQgResultsinSimpleDriveRequirement 2.ImprovedGate,AvalancheandDynamicdV/dtRuggedness 3.FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent 4.LowRDS(on) 5.Lead(Pb)-freeAvailable | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRFB18N50K | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=17A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.29Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
IRFB18N50K | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
IRFB18N50K | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
Power MOSFET 1.LowGateChargeQgResultsinSimpleDriveRequirement 2.ImprovedGate,AvalancheandDynamicdV/dtRuggedness 3.FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent 4.LowRDS(on) 5.Lead(Pb)-freeAvailable | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
SMPS MOSFET | IRF International Rectifier | IRF | ||
Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
Z-MOSRFPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
Z-MOSRFPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
Z-MOSRFPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
JJW |
詳細參數(shù)
- 型號:
IRFB18N50K
- 功能描述:
MOSFET N-Chan 500V 17 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
23+ |
原廠封裝 |
21034 |
專注原裝正品現(xiàn)貨特價中量大可定 |
詢價 | |||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
2015+ |
TO-220AB |
12500 |
全新原裝,現(xiàn)貨庫存長期供應(yīng) |
詢價 | ||
IR |
24+ |
TO-220AB |
8866 |
詢價 | |||
IR |
23+ |
TO-220 |
9960 |
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價 | ||
IR |
24+ |
TO-220 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR原裝正品 |
22+23+ |
TO-220 |
25697 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IR |
513 |
698 |
原裝正品 |
詢價 | |||
FSC |
20+ |
TO-220 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 |
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