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首頁(yè) >IRFBF20>規(guī)格書(shū)列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IRFBF20	文件：168.78 Kbytes Page：6 Pages	Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitveAvalancheRated ?FastSwitching ?EaseofParalleling	IRF International Rectifier	IRF
IRFBF20	文件：985.06 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBF20	文件：264.07 Kbytes Page：9 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBF20L	文件：311.85 Kbytes Page：10 Pages	Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A) Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount(IRFBF20S) ?Low-profilethrough-hole(IRFBF20L) ?AvailableinTape&Ree	IRF International Rectifier	IRF
IRFBF20L	文件：940.9 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBF20L	文件：312.93 Kbytes Page：11 Pages	Power MOSFET FEATURES ?Surface-mount(IRFBF20S,SiHFBF20S) ?Low-profilethrough-hole(IRFBF20L,SiHFBF20L) ?Availableintapeandreel(IRFBF20S,SiHFBF20S) ?DynamicdV/dtrating ?150°Coperatingtemperature ?Fastswitching ?Fullyavalancherated ?Materialcategorization:fordefinitionsofco	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBF20LPBF	文件：940.9 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBF20PBF	文件：985.06 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBF20S	文件：311.85 Kbytes Page：10 Pages	Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A) Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount(IRFBF20S) ?Low-profilethrough-hole(IRFBF20L) ?AvailableinTape&Ree	IRF International Rectifier	IRF
IRFBF20S	文件：940.9 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBF20S	文件：312.93 Kbytes Page：11 Pages	Power MOSFET FEATURES ?Surface-mount(IRFBF20S,SiHFBF20S) ?Low-profilethrough-hole(IRFBF20L,SiHFBF20L) ?Availableintapeandreel(IRFBF20S,SiHFBF20S) ?DynamicdV/dtrating ?150°Coperatingtemperature ?Fastswitching ?Fullyavalancherated ?Materialcategorization:fordefinitionsofco	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBF20S_V01	文件：312.93 Kbytes Page：11 Pages	Power MOSFET FEATURES ?Surface-mount(IRFBF20S,SiHFBF20S) ?Low-profilethrough-hole(IRFBF20L,SiHFBF20L) ?Availableintapeandreel(IRFBF20S,SiHFBF20S) ?DynamicdV/dtrating ?150°Coperatingtemperature ?Fastswitching ?Fullyavalancherated ?Materialcategorization:fordefinitionsofco	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBF20SPBF	文件：940.9 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBF20STRL	文件：940.9 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBF20STRLPBF	文件：940.9 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBF20STRR	文件：940.9 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBF20STRRPBF	文件：940.9 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBF20_V01	文件：264.07 Kbytes Page：9 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBF20LPBF	文件：373.95 Kbytes Page：10 Pages	HEXFET Power MOSFET	IRF International Rectifier	IRF
IRFBF20LPBF	文件：312.93 Kbytes Page：11 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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詳細(xì)參數(shù)

型號(hào)：
IRFBF20
功能描述：
MOSFET N-Chan 900V 1.7 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市昌和盛利電子有限公司	IRFBF20	IR	23+	TO-220	9896		詢價(jià)
深圳市星佑電子有限公司	IRFBF20	IR	06+	TO-220	6000	全新原裝絕對(duì)有貨	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	IRFBF20	IR	2016+	TO-220	6528	房間原裝進(jìn)口現(xiàn)貨假一賠十	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IRFBF20	IR	24+	TO-220AB	8866		詢價(jià)
深圳市博浩通科技有限公司	IRFBF20	IR	23+	TO-220AB	8600	全新原裝現(xiàn)貨	詢價(jià)
深圳市弘為電子有限公司	IRFBF20	IR	16+	原廠封裝	466	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市永貝爾科技有限公司	IRFBF20	IRF	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市華來(lái)深電子有限公司	IRFBF20	IR	23+	TO220	8560	受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!	詢價(jià)
深圳市納立科技有限公司	IRFBF20	VISH	三年內(nèi)		1983	只做原裝正品	詢價(jià)
瀚佳科技(深圳)有限公司	IRFBF20	IR	2020+	TO-220AB	16800	絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?	詢價(jià)

更多IRFBF20供應(yīng)商更新時(shí)間2024-12-26 9:00:00

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