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首頁 >IRFL214/TRPBF>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFL214PBF	文件：225.07 Kbytes Page：9 Pages	HEXFET?PowerMOSFET	IRF International Rectifier	IRF
IRFL214PBF	文件：877.86 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFL214TR	文件：877.86 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFL214TRPBF	文件：877.86 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFL214TRPBFA	文件：278.12 Kbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFM214B	文件：692.69 Kbytes Page：8 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFN214B	文件：607.27 Kbytes Page：8 Pages	250VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFR214	文件：52.94 Kbytes Page：6 Pages	2.2A,250V,2.000Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheyareadvancedpowerMOSFETsaredesignedforuseinapplicationssuchasswitchingregulators	Intersil Intersil Corporation	Intersil
IRFR214	文件：169.07 Kbytes Page：6 Pages	PowerMOSFET(Vdss=250V,Rds(on)=2.0ohm,Id=2.2A) HEXFET?PowerMOSFET VDSS=250V RDS(on)=2.0Ω ID=2.2A	IRF International Rectifier	IRF
IRFR214	文件：1.74298 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR214	文件：853.62 Kbytes Page：11 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR214	文件：331.94 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFR214	文件：4.26318 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR214	文件：873.05 Kbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR214,SiHFR214) ?Straightlead(IRFU214,SiHFU214) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR214A	文件：321.15 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFR214B	文件：647.48 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFR214PBF	文件：2.14295 Mbytes Page：10 Pages	HEXFET?PowerMOSFET HEXFET?PowerMOSFET ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR214) ?StraightLead(IRFU214) ?AvailableinTape&Reel ?FastSwitching ?EaseofParalleling ?Lead-Free	IRF International Rectifier	IRF
IRFR214PBF	文件：1.74298 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR214PBF	文件：4.26318 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR214PBF	文件：873.05 Kbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市河鋒鑫科技有限公司	IRFL214/TRPBF	IR	22+	SOT223	6000	終端可免費供樣,支持BOM配單	詢價
深圳市安富世紀(jì)電子有限公司	IRFL214/TRPBF	IR	23+	SOT223	8000	只做原裝現(xiàn)貨	詢價
天津市博通航睿技術(shù)有限公司	IRFL214/TRPBF	IR	23+	SOT223	7000		詢價
深圳市百域芯科技有限公司	IRFL214N	Bychip/百域芯	21+	SOT223	30000	優(yōu)勢供應(yīng) 品質(zhì)保障可開13點發(fā)票	詢價
深圳市聯(lián)世界科技有限公司	IRFL214PBF	VISHAY	08+	SOT-223	11920	原裝正品現(xiàn)貨庫存價優(yōu)	詢價
深圳市博浩通科技有限公司	IRFL214PBF	VISHAY	23+	SOT223	7750	全新原裝優(yōu)勢	詢價
深圳市永貝爾科技有限公司	IRFL214PBF	IRF	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
上海金慶電子技術(shù)有限公司	IRFL214PBF	VishayPCS	新		5	全新原裝貨期兩周	詢價
綠盛電子(香港)有限公司	IRFL214PBF	VISHAY	2018+		26976	代理原裝現(xiàn)貨/特價熱賣!	詢價
深圳市科恒偉業(yè)電子有限公司	IRFL214PBF	IR	1948+	SOT-223	6852	只做原裝正品現(xiàn)貨!或訂貨假一賠十!	詢價

更多IRFL214/TRPBF供應(yīng)商更新時間2025-1-1 14:00:00

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