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IRFP32N50KPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP32N50KPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP32N50KPBF

HEXFETPowerMOSFET(VDSS=500V,RDS(on)typ.=0.135廓,ID=32A)

SMPSMOSFET Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Lead-Free Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynam

IRF

International Rectifier

IXFH32N50

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect ?Fastintrin

IXYS

IXYS Corporation

IXFH32N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=32A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH32N50Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=32A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH32N50Q

HiPerFET??PowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Moldingepox

IXYS

IXYS Corporation

IXFJ32N50Q

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated Highdv/dt,Lowtrr,HDMOS?Family Features ?Lowprofile,highpowerpackage ?Longcreepandstrikedistances ?Easyup-gradepathforTO-220 designs ?LowRDS(on)lowQgprocess ?Ruggedpolysilicongatecel

IXYS

IXYS Corporation

IXFJ32N50Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK32N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK32N50Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox

IXYS

IXYS Corporation

IXFK32N50Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox

IXYS

IXYS Corporation

IXFR32N50Q

HiPerFETPowerMOSFETsISOPLUS247

IXYS

IXYS Corporation

IXFT32N50

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect ?Fastintrin

IXYS

IXYS Corporation

IXFT32N50Q

HiPerFET??PowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Moldingepox

IXYS

IXYS Corporation

IXFX32N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX32N50

HiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFX32N50Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox

IXYS

IXYS Corporation

IXFX32N50Q

HiPerFETPowerMOSFETsQ-Class

IXYS

IXYS Corporation

IXFX32N50Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox

IXYS

IXYS Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
7000
詢價
VIS
23+
TO-247AC
10000
公司只做原裝正品
 詢價
VIS
23+
TO-247AC
6000
原裝正品，支持實單
 詢價
VIS
22+
TO-247AC
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
VIS
24+
TO-247AC
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
VISHAY
18+
TO-247
85600
保證進口原裝可開17%增值稅發(fā)票
 詢價
IR
23+
TO-247
9896
詢價
更多IRFP32N50K(IR)供應(yīng)商 更新時間2025-1-7 10:00:00

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