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IRFS630

N-CHANNELMOSFETinaTO-220FPlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

IRFS630

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRFS630A

AdvancedPowerMOSFET

FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:10?(Max.)@VDS=200V LowRDS(ON):0.333(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFS630A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS630A

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRFS630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFW630

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?9.0A,200V,RDS(on)=0.4?@VGS=10V ?Lowgatecharge(typical22nC) ?LowCrss(typical22pF) ?Fastswitching ?100av

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFW630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?9.0A,200V,RDS(on)=0.4?@VGS=10V ?Lowgatecharge(typical22nC) ?LowCrss(typical22pF) ?Fastswitching ?100av

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFW630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?9.0A,200V,RDS(on)=0.4?@VGS=10V ?Lowgatecharge(typical22nC) ?LowCrss(typical22pF) ?Fastswitching ?100av

KERSEMI

Kersemi Electronic Co., Ltd.

IRL630

PowerMOSFET(Vdss=200V,RdS(on)=0.40ohm,Id=9.0A)

VDSS=200V RDS(on)=0.40? ID=9.0A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme

IRF

International Rectifier

IRL630

PowerMOSFET

VDS(V)200V RDS(on)(Ω)VGS=5V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL630

HEXFETPowerMosfet

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRL630

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?150°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL630

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?150°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL630A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.4? ID=9A FEATURES ?Logic-LevelGateDrive ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):0.335?

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRL630A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRL630PBF

HEXFET?PowerMOSFET

VDSS=200V RDS(on)=0.40? ID=9.0A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme

IRF

International Rectifier

IRL630PBF

PowerMOSFET

VDS(V)200V RDS(on)(Ω)VGS=5V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL630S

PowerMOSFET(Vdss=200V,Rds(on)=0.40ohm,Id=9.0A)

VDSS=200V RDS(on)=0.40? ID=9.0A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableo

IRF

International Rectifier

IRL630S

AvailableinTapeandReel

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
22+
TO-220
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
ST
22+
TO-220
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
 詢價(jià)
IR
23+
TO-220
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
TO-220
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
TO-220
7000
詢價(jià)
IR
23+
TO3P
8653
全新原裝優(yōu)勢
 詢價(jià)
IR
23+
TO-247
10000
公司只做原裝正品
 詢價(jià)
哈里斯
23+
NA
37850
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
IR
23+
TO-247
6000
原裝正品，支持實(shí)單
 詢價(jià)
IR
24+
TO-247
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價(jià)
更多IRFP630供應(yīng)商 更新時(shí)間2025-1-11 10:00:00

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