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IRFR1018E

N-ChannelMOSFETTransistor

?DESCRITION ?HighSpeedPowerSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤8.4m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR1018EPBF

HEXFETTMPowerMOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

IRFR1018EPBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFR1018EPBF

HighEfficiencySynchronousRectificationinSMPS

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

IRFR1018ETRPBF

HighEfficiencySynchronousRectificationinSMPS

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

IRFU1018E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFU1018EPBF

HEXFETTMPowerMOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

IRFU1018EPBF

HighEfficiencySynchronousRectificationinSMPS

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

ISF1018

iscN-ChannelMOSFETTransistor

FEATURES ·Lowdrain-sourceon-resistance :RDS(ON)=0.073Ω(typ.) ·EasytocontrolGateswitching ·Enhancementmode :Vth=2.7to3.7V(VDS=10V,ID=1.5mA) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRITION ·Switching

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

KIT1018S

PhotoInterrupter

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

KT1018TLD

4PINLSOPPHOTOTRANSISTORPHOTOCOUPLER

COSMO

COSMO Electronics Corporation

KT1018TRU

4PINLSOPPHOTOTRANSISTORPHOTOCOUPLER

COSMO

COSMO Electronics Corporation

LD1018

16ChannelConstantCurrentLEDDriver

LDT

LDT Co., Ltd

LD1018SP

16ChannelConstantCurrentLEDDriver

LDT

LDT Co., Ltd

LD1018SS

16ChannelConstantCurrentLEDDriver

LDT

LDT Co., Ltd

LT1018

MicropowerDualComparator

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT1018

MicropowerDualComparator

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT1018

MicropowerDualComparator

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT1018CH

MicropowerDualComparator

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT1018CH

MicropowerDualComparator

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

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更多IRFR1018/E供應(yīng)商 更新時(shí)間2025-1-1 13:00:00