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IRFR1018E

N-ChannelMOSFETTransistor

?DESCRITION ?HighSpeedPowerSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤8.4m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR1018EPBF

HEXFETTMPowerMOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

IRFR1018EPBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFR1018EPBF

HighEfficiencySynchronousRectificationinSMPS

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

IRFR1018ETRPBF

HighEfficiencySynchronousRectificationinSMPS

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

IRFU1018E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFU1018EPBF

HEXFETTMPowerMOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

IRFU1018EPBF

HighEfficiencySynchronousRectificationinSMPS

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

ISF1018

iscN-ChannelMOSFETTransistor

FEATURES ·Lowdrain-sourceon-resistance :RDS(ON)=0.073Ω(typ.) ·EasytocontrolGateswitching ·Enhancementmode :Vth=2.7to3.7V(VDS=10V,ID=1.5mA) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRITION ·Switching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

KIT1018S

PhotoInterrupter

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團

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IR
23+
SOT252
50000
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IR
22+
SOT252
6000
終端可免費供樣,支持BOM配單
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IR
23+
SOT252
7000
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IR
23+
SOT252
50000
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MICROCHI
2020+
TO-252
350000
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IR
19+
TO-252
74946
原廠代理渠道,每一顆芯片都可追溯原廠；
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IR
23+
TO-252
11846
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IR
18+
DPAK
85600
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IR
1822+
TO-252
9852
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IR
21+
TO-252
12588
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更多IRFR1018/E供應(yīng)商 更新時間2025-3-2 13:00:00

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