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IRGB430

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGB430U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGB430U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRGP430U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGP430U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRK.430

SUPERMAGN-A-pak-TMPowerModules

Features ■Highcurrentcapability ■3000VRMSisolatingvoltagewithnon-toxicsubstrate ■Highsurgecapability ■Highvoltageratingsupto2000V ■Industrialstandardpackage ■ULrecognitionpending TypicalApplications ■Motorstarters ■DCmotorcontrols-ACmotorcontrols ■Unin

IRF

International Rectifier

IRK430

SUPERMAGN-A-PAK??PowerModules

IRF

International Rectifier

ISCNL430W

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=70mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXDD430

30AmpLow-SideUltrafastMOSFET/IGBTDriver

GeneralDescription TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrentgatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheirminimumswitchingtimeandmaximumpracticalfrequencylimits.TheIXD_430cansourceandsink30Aofpeakcurrentwhileproducingvoltager

IXYS

IXYS Corporation

IXDD430

30AmpLow-SideUltrafastMOSFET/IGBTDriver

IXYS

IXYS Corporation

IXDD430CI

30AmpLow-SideUltrafastMOSFET/IGBTDriver

GeneralDescription TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrentgatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheirminimumswitchingtimeandmaximumpracticalfrequencylimits.TheIXD_430cansourceandsink30Aofpeakcurrentwhileproducingvoltager

IXYS

IXYS Corporation

IXDD430CI

30AmpLow-SideUltrafastMOSFET/IGBTDriver

IXYS

IXYS Corporation

IXDD430MCI

30AmpLow-SideUltrafastMOSFET/IGBTDriver

IXYS

IXYS Corporation

IXDD430MYI

30AmpLow-SideUltrafastMOSFET/IGBTDriver

IXYS

IXYS Corporation

IXDD430YI

30AmpLow-SideUltrafastMOSFET/IGBTDriver

GeneralDescription TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrentgatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheirminimumswitchingtimeandmaximumpracticalfrequencylimits.TheIXD_430cansourceandsink30Aofpeakcurrentwhileproducingvoltager

IXYS

IXYS Corporation

IXDD430YI

30AmpLow-SideUltrafastMOSFET/IGBTDriver

IXYS

IXYS Corporation

IXDI430

30AmpLow-SideUltrafastMOSFET/IGBTDriver

GeneralDescription TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrentgatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheirminimumswitchingtimeandmaximumpracticalfrequencylimits.TheIXD_430cansourceandsink30Aofpeakcurrentwhileproducingvoltager

IXYS

IXYS Corporation

IXDI430

30AmpLow-SideUltrafastMOSFET/IGBTDriver

IXYS

IXYS Corporation

IXDI430CI

30AmpLow-SideUltrafastMOSFET/IGBTDriver

GeneralDescription TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrentgatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheirminimumswitchingtimeandmaximumpracticalfrequencylimits.TheIXD_430cansourceandsink30Aofpeakcurrentwhileproducingvoltager

IXYS

IXYS Corporation

IXDI430CI

30AmpLow-SideUltrafastMOSFET/IGBTDriver

IXYS

IXYS Corporation

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SEMELAB
23+
TO-257AA
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
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SEMELAB
23+
TO-257AA
8000
只做原裝現(xiàn)貨
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SEMELAB
23+
TO-257AA
7000
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WSI
CDIP
3647
萊克訊每片來自原廠!價(jià)格超越代理!只做進(jìn)口原裝!
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IR
22+
TO-3
6000
終端可免費(fèi)供樣,支持BOM配單
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IR
2318+
TO-3
4862
只做進(jìn)口原裝!假一賠百!自己庫(kù)存價(jià)優(yōu)!
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IR
18+
TO
85600
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IR
24+
N/A
90000
原廠正規(guī)渠道現(xiàn)貨、保證原裝正品價(jià)格合理
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IR
24+
45
全新原裝
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IR
18+
TO-254
300
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190
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更多IRFY430-QR-EB供應(yīng)商 更新時(shí)間2024-12-27 8:10:00