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IRF224

HEXFET TRANSISTORS

250V1.1ohmHEXFET

IRF

International Rectifier

IRF224

High Speed Applications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFD224

PowerMOSFET(Vdss=250V,Rds(on)=1.1ohm,Id=0.63A)

VDSS=250V RDS(on)=1.1? ID=0.63A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD224

PowerMOSFET

VDS(V)250 RDS(on)(Ω)VGS=10V1.1 Qg(Max.)(nC)14 Qgs(nC)2.7 Qgd(nC)7.8 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD224

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?ForautomaticInsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD224PBF

PowerMOSFET

VDS(V)250 RDS(on)(Ω)VGS=10V1.1 Qg(Max.)(nC)14 Qgs(nC)2.7 Qgd(nC)7.8 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD224PBF

HEXFETPOWERMOSFET(VDSS=250V,RDS(on)=1.1廓,ID=0.63A)

VDSS=250V RDS(on)=1.1? ID=0.63A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD224PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFM224B

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFR224

PowerMOSFET(Vdss=250V,Rds(on)=1.1ohm,Id=3.8A)

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRF224

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
23+
TO-204AA(TO-3)
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
IR
24+
TO-3
10000
詢價
IR
2016+
TO-220
4558
只做進口原裝現(xiàn)貨!假一賠十!
 詢價
IR
2015+
TO-3(鐵帽)
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
22+23+
TO-220
26069
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
IR
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
 詢價
IR
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
更多IRF224供應(yīng)商 更新時間2025-2-2 16:12:00

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