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零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFG9110	文件：218.24 Kbytes Page：7 Pages	POWERMOSFETTHRU-HOLE(MO-036AB)	IRF International Rectifier	IRF
IRFG9110	文件：221.5 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFL9110	文件：171.51 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-100V,Rds(on)=1.2ohm,Id=-1.1A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolder	IRF International Rectifier	IRF
IRFL9110	文件：1.3922 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFL9110	文件：360.03 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFL9110	文件：357.61 Kbytes Page：9 Pages	PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?P-channel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgenerationpower	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFL9110PBF	文件：223.19 Kbytes Page：9 Pages	HEXFET?PowerMOSFET(VDSS=-100V,RDS(on)=1.2廓,ID=-1.1A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesold	IRF International Rectifier	IRF
IRFL9110PBF	文件：1.3922 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFL9110TR	文件：1.3922 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFL9110TRPBF	文件：1.3922 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFL9110TRPBF	文件：1.04318 Mbytes Page：8 Pages	P-Channel100-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
IRFL9110TRPBFA	文件：357.61 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9110	文件：172.32 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-100V,Rds(on)=1.2ohm,Id=-3.1A) DESCRIPTION ThirdGnerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtec	IRF International Rectifier	IRF
IRFR9110	文件：62.52 Kbytes Page：7 Pages	3.1A,100V,1.200Ohm,P-ChannelPowerMOSFETs TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheseareP-Channelenhancementmodesilicongatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switching	Intersil Intersil Corporation	Intersil
IRFR9110	文件：1.37621 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9110	文件：3.76945 Mbytes Page：7 Pages	DynamicdV/dtRating	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9110	文件：3.89837 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9110	文件：3.89222 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9110	文件：792.48 Kbytes Page：11 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9110	文件：321 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市弘為電子有限公司	IRFF9110R	HARRIS	24+	CAN3	1100	原裝現(xiàn)貨假一罰十	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	IRFF9110R	HARRIS	專業(yè)鐵帽	CAN3	67500	鐵帽原裝主營-可開原型號(hào)增稅票	詢價(jià)
深圳市博浩通科技有限公司	IRFF9111	HAR	23+	CAN	12625	優(yōu)勢(shì)庫存	詢價(jià)
深圳市華來深電子有限公司	IRFF9111	IR	23+	CAN3	8650	受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!	詢價(jià)
深圳市錦喆鴻電子有限公司	IRFF9111	IR	21+	CAN3	12588	原裝正品,自己庫存假一罰十	詢價(jià)
深圳市昊創(chuàng)電子有限公司	IRFF9111	IR		CAN3	1873	專營CAN鐵帽仔	詢價(jià)
深圳市納艾斯科技有限公司	IRFF9111	IR	2020+	CAN3	80000	只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價(jià)
深圳市億智騰科技有限公司	IRFF9111	HARRIS	24+	CAN3	6430	原裝現(xiàn)貨/歡迎來電咨詢	詢價(jià)
深圳市威雅利發(fā)展有限公司	IRFF9111	IR	1307+	CAN3	500	一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價(jià)
深圳市維爾達(dá)電子有限公司	IRFF9111	ADI	2022+	MQFP	6000	一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品	詢價(jià)

更多IRFF9110R供應(yīng)商更新時(shí)間2025-1-10 13:30:00

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