首頁 >IRFP3710-CHINA>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

IRFP3710PBF

HEXFETPOWERMOSFET(VDSS=100V,RDS(on)=0.025廓,ID=57A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP3710PBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRFR3710Z

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

IRFR3710Z

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤18m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR3710ZPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

IRF

International Rectifier

IRFR3710ZPBF

HEXFET?PowerMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFR3710ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFR3710ZPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3710ZPBF

HEXFETPowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3710ZPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

KERSEMI

Kersemi Electronic Co., Ltd.

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
TO-247
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價
IR
23+
TO-247
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO-247
7000
詢價
IR
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
2022
TO-247
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
INFINEON/英飛凌
2023+
TO-247
2000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價
IR
24+
TO-247-3
8866
詢價
IR
23+
TO-247AC-
7750
全新原裝優(yōu)勢
 詢價
IR
17+
TO-247
6200
100%原裝正品現(xiàn)貨
 詢價
Infineon
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價
更多IRFP3710-CHINA供應(yīng)商 更新時間2025-2-1 14:00:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多