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IRFR224PBF	文件：853.71 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR224PBF	文件：511.42 Kbytes Page：10 Pages	HEXFETPowerMOSFET	IRF International Rectifier	IRF
IRFR224PBF	文件：3.37389 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR224PBF	文件：4.12218 Mbytes Page：10 Pages	Dynamicdv/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR224PBF	文件：368.2 Kbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR224TR	文件：853.71 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR224TRA	文件：3.37075 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR224TRA	文件：3.37389 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR224TRL	文件：853.71 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR224TRL	文件：3.37389 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR224TRLA	文件：3.37389 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR224TRLA	文件：3.37075 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR224TRLPBF	文件：853.71 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR224TRLPBFA	文件：3.37075 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR224TRLPBFA	文件：3.37389 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR224TRLPBFA	文件：368.2 Kbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR224TRPBF	文件：853.71 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR224TRPBFA	文件：3.37075 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR224TRPBFA	文件：3.37389 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR224TRPBFA	文件：368.2 Kbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市星佑電子有限公司	IRFR224D	INTERNATIONA	05+	原廠原裝	4355	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRFR224FR224	IR	23+	TO-252	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市威雅利發(fā)展有限公司	IRFR224FR224	IR	1932+	TO-252	725	一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價(jià)
深圳市億鴻豐電子科技有限公司	IRFR224FR224	IR		TO-252	6000	原裝現(xiàn)貨,長(zhǎng)期供應(yīng),終端可賬期	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	IRFR224MOS(場(chǎng)效應(yīng)管)	IR	23+	SOT-252	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市創(chuàng)盛芯科技有限公司	IRFR224MOS(場(chǎng)效應(yīng)管)	VISHAY/威世	24+	TO-252	7500	原裝現(xiàn)貨假一賠十	詢價(jià)
深圳廊盛科技有限公司	IRFR224MOS(場(chǎng)效應(yīng)管)	IR	2022	SOT-252	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價(jià)
深圳市河鋒鑫科技有限公司	IRFR224N	IR	22+	SOT-252	6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
天津市博通航睿技術(shù)有限公司	IRFR224N	IR	23+	SOT-252	7000		詢價(jià)
京海半導(dǎo)體(深圳)有限公司	IRFR224NTR	IR	21+	SOT-252	10000	原裝現(xiàn)貨假一罰十	詢價(jià)

更多IRFR224D供應(yīng)商更新時(shí)間2024-11-18 10:34:00

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