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IRG4BC20K-STRLP

包裝：卷帶（TR） 封裝/外殼：TO-263-3，D2Pak（2 引線 + 接片），TO-263AB 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 16A 60W D2PAK

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4BC20MD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=11A)

Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardTO-220ABpackage Benefits ?Offershighestefficiencyandshortcircuitcapabilityforinterme

IRF

International Rectifier

IRG4BC20MDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardTO-220ABpackage ?Lead-Free Benefits ?Offershighestefficiencyandshortcircuitcapabilityforintermed

IRF

International Rectifier

IRG4BC20MDS

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=11A)

Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardD2Pakpackage Benefits ?Offershighestefficiencyandshortcircuitcapabilityforintermediateapplication

IRF

International Rectifier

IRG4BC20MD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=11A)

Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardD2Pakpackage Benefits ?Offershighestefficiencyandshortcircuitcapabilityforintermediateapplication

IRF

International Rectifier

IRG4BC20MD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4BC20MD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4BC20S

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC20S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=10A)

Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4BC20SD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=10A)

Features ?Extremelylowvoltagedrop1.4Vtyp.@10A ?S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. ?VeryTightVce(on)distribution ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-para

IRF

International Rectifier

IRG4BC20SDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?Extremelylowvoltagedrop1.4Vtyp.@10A ?S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. ?VeryTightVce(on)distribution ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-paralleldio

IRF

International Rectifier

IRG4BC20SDS

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=10A)

IRF

International Rectifier

IRG4BC20SD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=10A)

IRF

International Rectifier

IRG4BC20SD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIOD

IRF

International Rectifier

IRG4BC20SPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4BC20SPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC20U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC20U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=6.5A)

Features ?UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage Benefits ?Gener

IRF

International Rectifier

IRG4BC20UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=6.5A)

Features ?UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFRED?ultrafast, ultra-s

IRF

International Rectifier

IRG4BC20UD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    IRG4BC20K-STRLP

  • 制造商：

    Infineon Technologies

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    卷帶（TR）

  • 不同?Vge、Ic 時(shí)?Vce(on)（最大值）：

    2.8V @ 15V，9A

  • 開關(guān)能量：

    150μJ（開），250μJ（關(guān)）

  • 輸入類型：

    標(biāo)準(zhǔn)

  • 25°C 時(shí) Td（開/關(guān)）值：

    28ns/150ns

  • 測(cè)試條件：

    480V，9A，50 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    TO-263-3，D2Pak（2 引線 + 接片），TO-263AB

  • 供應(yīng)商器件封裝：

    D2PAK

  • 描述：

    IGBT 600V 16A 60W D2PAK

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
Infineon Technologies
21+
D2PAK
800
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠信經(jīng)營)!
 詢價(jià)
INFINEON
1503+
TO-263
3000
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
IR
23+
D2PAK
10000
公司只做原裝正品
 詢價(jià)
Infineon
22+
NA
2118
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
Infineon Technologies
24+
原裝
5000
原裝正品,提供BOM配單服務(wù)
 詢價(jià)
Infineon Technologies
2022+
D2PAK
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價(jià)
INFINEON
23+
D2PAK
8000
只做原裝現(xiàn)貨
 詢價(jià)
INFINEON
23+
D2PAK
7000
詢價(jià)
Infineon Technologies
24+
TO-263-3 D?Pak(2 引線 + 接片
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價(jià)
IR
17+
TO-263
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
更多IRG4BC20K-STRLP供應(yīng)商 更新時(shí)間2024-11-15 14:02:00

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