首頁 >IRF9530NBPF>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
AdvancedProcessTechnology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowintern | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscP-ChannelMOSFETTransistor ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤200m?(@VGS=-10V;ID=-8.4A) ?Advancedtrenchprocesstechnology ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Fastswitchingapplication. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=-100V,Rds(on)=0.20ohm,Id=-14A) VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt | IRF International Rectifier | IRF | ||
AdvancedProcessTechnologySurfaceMount VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt | IRF International Rectifier | IRF | ||
ADVANCEDPROCESSTECHNOLOGY | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt | IRF International Rectifier | IRF | ||
P-Channel100V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PowerSwitch ?LoadSwitchinHighCurrentApplications ?DC/DCConverters | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
PowerMOSFET(Vdss=-100V,Rds(on)=0.20ohm,Id=-14A) VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt | IRF International Rectifier | IRF | ||
iscP-ChannelMOSFETTransistor ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤200m?(@VGS=-10V;ID=-8.4A) ?Advancedtrenchprocesstechnology ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Fastswitchingapplication. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | |||
IR |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價 | |||
IR |
23+ |
7000 |
詢價 | ||||
IR |
2015+ |
TO-262 |
12500 |
全新原裝,現(xiàn)貨庫存長期供應 |
詢價 | ||
IR |
23+ |
TO-262 |
7600 |
全新原裝現(xiàn)貨 |
詢價 | ||
IR |
24+ |
TO-262 |
8866 |
詢價 | |||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
23+ |
TO-262-3 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
IR |
24+ |
TO-262 |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
INFINEON |
1503+ |
TO-262 |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 |
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