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RFD12N06RLE

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.063?,VGS=10V -rDS(ON)=0.071?,VGS=5V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels -www.fairchildsemi.com ?PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD12N06RLE

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

Intersil

Intersil Corporation

RFD12N06RLESM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

RFD12N06RLESM

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

Intersil

Intersil Corporation

RFD12N06RLESM

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.063?,VGS=10V -rDS(ON)=0.071?,VGS=5V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels -www.fairchildsemi.com ?PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFP12N06

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.063?,VGS=10V -rDS(ON)=0.071?,VGS=5V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels -www.fairchildsemi.com ?PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFP12N06RLE

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

Intersil

Intersil Corporation

RFP12N06RLE

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.063?,VGS=10V -rDS(ON)=0.071?,VGS=5V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels -www.fairchildsemi.com ?PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFP12N06RLE

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

SDP12N06

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

供應商型號品牌批號封裝庫存備注價格
VB
21+
TO-252
10000
原裝現貨假一罰十
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I
22+
TO-252
6000
十年配單,只做原裝
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I
23+
TO-252
6000
原裝正品,支持實單
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I
22+
TO-252
25000
只做原裝進口現貨,專注配單
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I
23+
TO-252
8000
只做原裝現貨
詢價
I
23+
TO-252
7000
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I
24+
TO-252
12300
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
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IR
23+
DIP-4
1210
全新原裝現貨
詢價
IR-VISHAY
11+
DIP4
19289
原裝現貨
詢價
IR
23+
65480
詢價
更多IRFD12N06RLESM供應商 更新時間2025-3-15 10:10:00