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IRG4BC20F

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC20F

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A)

Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage Benefits ?Genera

IRF

International Rectifier

IRG4BC20FD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A)

Features ?Fast:optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistribution andhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recovery

IRF

International Rectifier

IRG4BC20FD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC20FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFRRECOVERYDIODE

IRF

International Rectifier

IRG4BC20FDPBF

OPTIMIZEDFORMEDIUMOPERATING

IRF

International Rectifier

IRG4BC20FD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A)

Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa

IRF

International Rectifier

IRG4BC20FD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODEFastCoPackIGBT

Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa

IRF

International Rectifier

IRG4BC20FD-STRL

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A)

Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa

IRF

International Rectifier

IRG4BC20FPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage ?Lead-Free Benef

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRG4BC20W-STRR

  • 功能描述：

    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB

供應商型號品牌批號封裝庫存備注價格
IR
2022+
TO220
57550
詢價
IR
23+24
TO-220
59630
主營原裝MOS,二三級管,肖特基,功率場效應管
 詢價
IR
15+
TO-220
11560
全新原裝,現(xiàn)貨庫存,長期供應
 詢價
IR
23+
TO-220
3000
全新原裝
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
2020+
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
IR
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
25+
8880
原裝認準芯澤盛世！
 詢價
IR
23+
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
IR
10+
TO-263
550
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
更多IRG4BC20W-STRR供應商 更新時間2025-3-1 11:30:00

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