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IRG4BC20WS

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTde

IRF

International Rectifier

IRG4BC20F

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC20F

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A)

Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage Benefits ?Genera

IRF

International Rectifier

IRG4BC20FD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A)

Features ?Fast:optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistribution andhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recovery

IRF

International Rectifier

IRG4BC20FD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC20FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFRRECOVERYDIODE

IRF

International Rectifier

IRG4BC20FDPBF

OPTIMIZEDFORMEDIUMOPERATING

IRF

International Rectifier

IRG4BC20FD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A)

Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa

IRF

International Rectifier

IRG4BC20FD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODEFastCoPackIGBT

Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa

IRF

International Rectifier

IRG4BC20FD-STRL

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A)

Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRG4BC20WS

  • 制造商：

    IRF

  • 制造商全稱：

    International Rectifier

  • 功能描述：

    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
TO-263
18050
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
21+
TO-263
10000
原裝現(xiàn)貨假一罰十
 詢價
Infineon Technologies
22+
D2PAK
9000
原廠渠道,現(xiàn)貨配單
 詢價
IR
2022
TO-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
Infineon Technologies
21+
D2PAK
13880
公司只售原裝,支持實單
 詢價
IR
23+
TO-263
9200
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
Infineon Technologies
23+
D2PAK
9000
原裝正品，支持實單
 詢價
IR
TO-263
68500
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
更多IRG4BC20WS供應(yīng)商 更新時間2025-3-1 16:30:00

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