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IRG4RC10UDTRP

包裝：卷帶（TR） 封裝/外殼：TO-252-3，DPak（2 引線 + 接片），SC-63 類別：分立半導體產品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 8.5A 38W DPAK

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4RC10

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A)

ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRF

International Rectifier

IRG4RC10

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,IC=2.0A)

Features ?Extremelylowvoltagedrop;1.0Vtypicalat2A,100°C ?Standard:Optimizedforminimumsaturation voltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4RC10

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A)

Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovideshigherefficiencythanGeneration3 ?IndustrystandardTO-252AApackage Benefits ?Generation4IGBTsofferhig

IRF

International Rectifier

IRG4RC10K

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A)

Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovideshigherefficiencythanGeneration3 ?IndustrystandardTO-252AApackage Benefits ?Generation4IGBTsofferhig

IRF

International Rectifier

IRG4RC10KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A)

ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRF

International Rectifier

IRG4RC10KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

ShortCircuitRatedUltraFastIGBT Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration

IRF

International Rectifier

IRG4RC10KPBF

INSULATEDGATEBIPOLARTRANSISTORShortCircuitRatedUltraFastIGBT

IRF

International Rectifier

IRG4RC10S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,IC=2.0A)

Features ?Extremelylowvoltagedrop;1.0Vtypicalat2A,100°C ?Standard:Optimizedforminimumsaturation voltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4RC10SD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,Ic=2.0A)

Features ?Extremelylowvoltagedrop1.1V(typ)@2A ?S-Series:Minimizespowerdissipationatupto3 KHzPWMfrequencyininverterdrives,upto4 KHzinbrushlessDCdrives. ?Tightparameterdistribution ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-soft-recoveryanti-

IRF

International Rectifier

IRG4RC10SDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4RC10SDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?Extremelylowvoltagedrop1.1V(typ)@2A ?S-Series:Minimizespowerdissipationatupto3 KHzPWMfrequencyininverterdrives,upto4 KHzinbrushlessDCdrives. ?Tightparameterdistribution ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-soft-recoveryanti-

IRF

International Rectifier

IRG4RC10U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.15V,@Vge=15V,Ic=5.0A)

Features ?UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswitching,>200kHzinresonantmode) ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration ?IndustrystandardTO-252AApackage Benefits ?Generation

IRF

International Rectifier

IRG4RC10UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.15V,@Vge=15V,Ic=5.0A)

UltraFastCoPackIGBT Features ?UltraFast:Optimizedformediumoperatingfrequencies(8-40kHzinhardswitching,>200kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration ?IGBTco-packagedwithHEXFREDTMu

IRF

International Rectifier

IRG4RC10UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswiching,>200kHzinresonantmode) ?Generation4IGBTdesignprovidestigherparameterdistributionandhigherefficiencythanpreviousgeneration ?IGBTco-packagedwithHEXFRED?ultrafast,ultra-soft-recovery

IRF

International Rectifier

IRG4RC10UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4RC10UPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4RC10UPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswiching,>200kHzinresonantmode) ?Generation4IGBTdesignprovidestigherparameterdistributionandhigherefficiencythanpreviousgeneration ?IndustrystandardTO-252AApackage ?Lead-Free Benefits

IRF

International Rectifier

IRG4RC10UTRPBF

Generation4IGBTdesignprovidestighterparameterdistributionandhighereffciencythanpreviousgeneration

Features ?UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswiching,>200kHzinresonantmode) ?Generation4IGBTdesignprovidestigherparameterdistributionandhigherefficiencythanpreviousgeneration ?IndustrystandardTO-252AApackage ?Lead-Free Benefits

IRF

International Rectifier

產品屬性

  • 產品編號：

    IRG4RC10UDTRP

  • 制造商：

    Infineon Technologies

  • 類別：

    分立半導體產品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    卷帶（TR）

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    2.6V @ 15V，5A

  • 開關能量：

    140μJ（開），120μJ（關）

  • 輸入類型：

    標準

  • 25°C 時 Td（開/關）值：

    40ns/87ns

  • 測試條件：

    480V，5A，100 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    TO-252-3，DPak（2 引線 + 接片），SC-63

  • 供應商器件封裝：

    D-Pak

  • 描述：

    IGBT 600V 8.5A 38W DPAK

供應商型號品牌批號封裝庫存備注價格
Infineon Technologies
21+
D-Pak
2000
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經營)!
 詢價
Infineon
1931+
N/A
493
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
INFINEON
1809+
TO-252
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
Infineon
22+
NA
493
加我QQ或微信咨詢更多詳細信息,
 詢價
Infineon Technologies
22+
DPak
9000
原廠渠道,現(xiàn)貨配單
 詢價
Infineon Technologies
21+
DPak
13880
公司只售原裝,支持實單
 詢價
IR
23+
DPAK
6000
原裝正品，支持實單
 詢價
Infineon Technologies
24+
原裝
5000
原裝正品,提供BOM配單服務
 詢價
Infineon Technologies
2022+
D-Pak
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
IR
22+
DPAK
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
更多IRG4RC10UDTRP供應商 更新時間2024-12-28 13:01:00

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