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IRG4RC10UTR

包裝:管件 封裝/外殼:TO-252-3,DPak(2 引線 + 接片),SC-63 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 8.5A 38W DPAK

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4RC10UTRPBF

Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation

Features ?UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswiching,>200kHzinresonantmode) ?Generation4IGBTdesignprovidestigherparameterdistributionandhigherefficiencythanpreviousgeneration ?IndustrystandardTO-252AApackage ?Lead-Free Benefits

IRF

International Rectifier

IRG4RC10UTRLPBF

包裝:卷帶(TR) 封裝/外殼:TO-252-3,DPak(2 引線 + 接片),SC-63 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 8.5A 38W DPAK

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4RC10UTRPBF

包裝:管件 封裝/外殼:TO-252-3,DPak(2 引線 + 接片),SC-63 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 8.5A 38W DPAK

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4RC10

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A)

ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRF

International Rectifier

IRG4RC10

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,IC=2.0A)

Features ?Extremelylowvoltagedrop;1.0Vtypicalat2A,100°C ?Standard:Optimizedforminimumsaturation voltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4RC10

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A)

Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovideshigherefficiencythanGeneration3 ?IndustrystandardTO-252AApackage Benefits ?Generation4IGBTsofferhig

IRF

International Rectifier

IRG4RC10K

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A)

Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovideshigherefficiencythanGeneration3 ?IndustrystandardTO-252AApackage Benefits ?Generation4IGBTsofferhig

IRF

International Rectifier

IRG4RC10KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A)

ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRF

International Rectifier

IRG4RC10KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

ShortCircuitRatedUltraFastIGBT Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration

IRF

International Rectifier

IRG4RC10KPBF

INSULATEDGATEBIPOLARTRANSISTORShortCircuitRatedUltraFastIGBT

IRF

International Rectifier

IRG4RC10S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,IC=2.0A)

Features ?Extremelylowvoltagedrop;1.0Vtypicalat2A,100°C ?Standard:Optimizedforminimumsaturation voltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4RC10SD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,Ic=2.0A)

Features ?Extremelylowvoltagedrop1.1V(typ)@2A ?S-Series:Minimizespowerdissipationatupto3 KHzPWMfrequencyininverterdrives,upto4 KHzinbrushlessDCdrives. ?Tightparameterdistribution ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-soft-recoveryanti-

IRF

International Rectifier

IRG4RC10SDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4RC10SDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?Extremelylowvoltagedrop1.1V(typ)@2A ?S-Series:Minimizespowerdissipationatupto3 KHzPWMfrequencyininverterdrives,upto4 KHzinbrushlessDCdrives. ?Tightparameterdistribution ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-soft-recoveryanti-

IRF

International Rectifier

IRG4RC10U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.15V,@Vge=15V,Ic=5.0A)

Features ?UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswitching,>200kHzinresonantmode) ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration ?IndustrystandardTO-252AApackage Benefits ?Generation

IRF

International Rectifier

IRG4RC10UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.15V,@Vge=15V,Ic=5.0A)

UltraFastCoPackIGBT Features ?UltraFast:Optimizedformediumoperatingfrequencies(8-40kHzinhardswitching,>200kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration ?IGBTco-packagedwithHEXFREDTMu

IRF

International Rectifier

IRG4RC10UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswiching,>200kHzinresonantmode) ?Generation4IGBTdesignprovidestigherparameterdistributionandhigherefficiencythanpreviousgeneration ?IGBTco-packagedwithHEXFRED?ultrafast,ultra-soft-recovery

IRF

International Rectifier

IRG4RC10UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4RC10UPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    IRG4RC10UTR

  • 制造商:

    Infineon Technologies

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    管件

  • 不同?Vge、Ic 時(shí)?Vce(on)(最大值):

    2.6V @ 15V,5A

  • 開關(guān)能量:

    80μJ(開),160μJ(關(guān))

  • 輸入類型:

    標(biāo)準(zhǔn)

  • 25°C 時(shí) Td(開/關(guān))值:

    19ns/116ns

  • 測(cè)試條件:

    480V,5A,100 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    TO-252-3,DPak(2 引線 + 接片),SC-63

  • 供應(yīng)商器件封裝:

    D-Pak

  • 描述:

    IGBT 600V 8.5A 38W DPAK

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO-252
200000
詢價(jià)
IR原裝
22+23+
TO-252
24038
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
IR原裝
19+
TO-252
9860
一級(jí)代理
詢價(jià)
IR
2020+
TO-252
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
Infineon Technologies
21+
D-Pak
2000
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))!
詢價(jià)
INFINEON
1503+
TO-252
3000
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
詢價(jià)
IR
23+
D-PAK
10000
公司只做原裝正品
詢價(jià)
Infineon
22+
NA
2118
加我QQ或微信咨詢更多詳細(xì)信息,
詢價(jià)
IR
23+
SOT-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
IR
21+
SOT-252
10000
原裝現(xiàn)貨假一罰十
詢價(jià)
更多IRG4RC10UTR供應(yīng)商 更新時(shí)間2024-11-15 16:30:00