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IRF9130SMD

P-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFE9130

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTOR

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTOR Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitythe

IRF

International Rectifier

IRFE9130

P-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFE9130

SimpleDriveRequirements

IRF

International Rectifier

IRFF9130

POWERMOSFETP-CHANNEL(BVdss=-100V,Rds(on)=0.30ohm,Id=-6.5A)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS THRU-HOLE-TO-205AF(TO-39) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylow

IRF

International Rectifier

IRFF9130

-6.5A,-100V,0.300Ohm,P-ChannelPowerMOSFET

-6.5A,-100V,0.300Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

Intersil

Intersil Corporation

IRFF9130

P-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF9130

P-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFF9130

Avalanche-Energy-RatedP-ChannelPowerMOSFETs

-5.5Aand-6.5A,-60Vand-100VrDS(on)=0.30Ωand0.40Ω TheIRFF9130,IRFF9131,IRFF9132andIRFF9133areadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Thesearep-channelenhancement-modesilicon-gat

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRFNJ9130

P-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFP9130

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導體

IRFP9130

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導體

IRFP9130

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP9130

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-12A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS9130

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFY9130

P-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFY9130C

POWERMOSFETTHRU-HOLE(TO-257AA)100V,P-CHANNELHEXFET?MOSFETTECHNOLOGY

PartNumberRDS(on)IDEyelets IRFY9130C0.3?-11.2ACeramic IRFY9130CM0.3?-11.2ACeramic HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon

IRF

International Rectifier

IRFY9130C

P-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRFY9130C

SimpleDriveRequirements

IRF

International Rectifier

IRFY9130CM

POWERMOSFETP-CHANNEL(BVdss=-100V,Rds(on)=0.3ohm,Id=-11.2A)

PartNumberRDS(on)IDEyelets IRFY9130C0.3?-11.2ACeramic IRFY9130CM0.3?-11.2ACeramic HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon

IRF

International Rectifier

供應商型號品牌批號封裝庫存備注價格
IR
最新
1000
原裝正品現(xiàn)貨
 詢價
IR
22+
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
7000
詢價
IR
24+
TO-3
10000
詢價
IR
2015+
TO-3(鐵帽)
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
IR
23+
TO-3
3000
特價庫存
 詢價
RCA
23+
TO-3
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
RCA
21+
TO-3
12588
原裝正品,自己庫存 假一罰十
 詢價
RCA
專業(yè)鐵帽
TO-3
39
原裝鐵帽專營,代理渠道量大可訂貨
 詢價
更多IRF9130CM供應商 更新時間2025-1-5 15:00:00

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