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IRF9530NS

iscP-ChannelMOSFETTransistor

?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤200m?(@VGS=-10V;ID=-8.4A) ?Advancedtrenchprocesstechnology ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Fastswitchingapplication.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF9530NS

AdvancedProcessTechnology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowintern

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9530NS

PowerMOSFET(Vdss=-100V,Rds(on)=0.20ohm,Id=-14A)

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NSPBF

AdvancedProcessTechnologySurfaceMount

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NSPBF

AdvancedProcessTechnology

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NSPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF9530NSPBF

HEXFET?PowerMOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF9530NSTRLPbF

HEXFET?PowerMOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF9530NSTRLPBF

AdvancedProcessTechnology

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NSTRR

PowerMOSFET(Vdss=-100V,Rds(on)=0.20ohm,Id=-14A)

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
22+
TO-220
6000
終端可免費(fèi)供樣,支持BOM配單
 詢(xún)價(jià)
IR
23+
TO-220
8000
只做原裝現(xiàn)貨
 詢(xún)價(jià)
IR
23+
TO-220
7000
詢(xún)價(jià)
INFINEON/英飛凌
23+
TO220
3000
十七年VIP會(huì)員,誠(chéng)信經(jīng)營(yíng)，一手貨源，原裝正品可零售！
 詢(xún)價(jià)
IR
22+
TO-220AB
20000
深圳原裝現(xiàn)貨正品有單價(jià)格可談
 詢(xún)價(jià)
INFINEON/英飛凌
2022+
TO-220AB
8000
只做原裝支持實(shí)單,有單必成。
 詢(xún)價(jià)
IR
23+
TO-220AB
30
詢(xún)價(jià)
INFINEON/英飛凌
22+
52000
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
 詢(xún)價(jià)
INFINEON/英飛凌
2023+
TO-220
11000
AI智能識(shí)別、工業(yè)、汽車(chē)、醫(yī)療方案LPC批量及配套一站
 詢(xún)價(jià)
IR/INFINEON
23+
TO-220
6856
只做原裝,只有原裝,誠(chéng)信之家
 詢(xún)價(jià)
更多IRF9530NPBF-CN供應(yīng)商 更新時(shí)間2025-2-9 14:00:00

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