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IRF9530NS

iscP-ChannelMOSFETTransistor

?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤200m?(@VGS=-10V;ID=-8.4A) ?Advancedtrenchprocesstechnology ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Fastswitchingapplication.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF9530NS

AdvancedProcessTechnology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowintern

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9530NS

PowerMOSFET(Vdss=-100V,Rds(on)=0.20ohm,Id=-14A)

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NSPBF

AdvancedProcessTechnologySurfaceMount

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NSPBF

AdvancedProcessTechnology

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NSPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF9530NSPBF

HEXFET?PowerMOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF9530NSTRLPbF

HEXFET?PowerMOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF9530NSTRLPBF

AdvancedProcessTechnology

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NSTRR

PowerMOSFET(Vdss=-100V,Rds(on)=0.20ohm,Id=-14A)

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

供應商型號品牌批號封裝庫存備注價格
24+
N/A
73000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
VBSEMI
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價
IR
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
22+
TO-220
20000
保證原裝正品,假一陪十
 詢價
IR
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
2018+
TO220
1950
詢價
IR
2022+
TO220
1950
原廠原裝,假一罰十
 詢價
IR
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
IR
21+
TO-220
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
IR
22+
TO220
128038
鄭重承諾只做原裝進口現(xiàn)貨
 詢價
更多IRF9530NPBF-VB供應商 更新時間2025-2-1 11:06:00

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