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IRFPS35N50L

HEXFETPowerMOSFET

Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent LowTrrandSoftDiodeRecovery HighPerformanceOptimisedAnti-parallelDiode Application

IRF

International Rectifier

IRFPS35N50L

IRFPS35N50L

FEATURES ?SuperFastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-f

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFPS35N50LPBF

IRFPS35N50L

FEATURES ?SuperFastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-f

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFPS35N50LPBF

SMPSMOSFET

IRF

International Rectifier

IXFK35N50

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?MoldingepoxiesmeetUL94V-0flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?UnclampedInductiveSwitching(UIS)rated ?Fastintrinsicrectifi

IXYS

IXYS Corporation

IXFK35N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=35A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFN35N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFX35N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100%avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX35N50

PowerMOSFETs

IXYS

IXYS Corporation

SIHFPS35N50L

IRFPS35N50L

FEATURES ?SuperFastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-f

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
22+
SOT-2617&NBS
4500
全新原裝品牌專營
 詢價(jià)
IR
22+
SUPER-247
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
SUPER-247
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
SUPER-247
7000
詢價(jià)
IR
06+
TO-247
1000
全新原裝 絕對(duì)有貨
 詢價(jià)
IR
9743
50
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
IR
2015+
SOP/DIP
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
HAR
24+
SOT
39
詢價(jià)
IR
15+
TO-247
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
 詢價(jià)
IR
23+
TO-3P
9896
詢價(jià)
更多IRFP35N50K供應(yīng)商 更新時(shí)間2025-1-3 17:25:00

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