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首頁 >IRF640PBFC>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRF640S	文件：228.71 Kbytes Page：10 Pages	PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=18A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. SurfaceMount(IRF640S) Low-profilethrough-hole(IRF640L) AvailableinTape&	IRF International Rectifier	IRF
IRF640S	文件：95.09 Kbytes Page：9 Pages	N-channelTrenchMOStransistor GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
IRF640S	文件：84.23 Kbytes Page：8 Pages	N-CHANNEL200V-0.150ohm-18ATO-263MESHOVERLAY]MOSFET DESCRIPTION ThispowerMOSFETisdesignedusinghecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwith standardpartsfromvarioussources. ■TYPICALRDS(on)=0.150? ■EXTREMELYHIGHdv/dtCAPABILITY ■	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
IRF640S	文件：2.11507 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRF640S	文件：237.05 Kbytes Page：10 Pages	PowerMOSFET FEATURES ?Surfacemount ?Low-profilethrough-hole ?Availableintapeandreel ?DynamicdV/dtrating ?150°Coperatingtemperature ?Fastswitching ?Fullyavalancherated ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatas	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRF640S	文件：286.91 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRF640SPBF	文件：2.11507 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRF640SPBF	文件：237.05 Kbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRF640STRL	文件：2.11507 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRF640STRLPBF	文件：2.11507 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRF640STRLPBFA	文件：237.05 Kbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRF640STRR	文件：2.11507 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRF640STRRPBF	文件：2.11507 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRF640STRRPBFA	文件：237.05 Kbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRF640T	文件：247.31 Kbytes Page：12 Pages	N-channel200V-0.15廓-15A-TO-220MESHOVERLAY??PowerMOSFET Description ThisPowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources Generalfeatures ■Extremelyhighdv/dtcapability ■Gatechargeminimize	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
IRFF640	文件：1.13916 Mbytes Page：5 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導體有限公司	DOINGTER
IRFI640	文件：703.84 Kbytes Page：9 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
IRFI640B	文件：703.84 Kbytes Page：9 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
IRFI640G	文件：1.80136 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFI640G	文件：172.81 Kbytes Page：6 Pages	PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=9.8A) DESCRIPTION ThirdgenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-in	IRF International Rectifier	IRF

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供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市河鋒鑫科技有限公司	IRF640PBFC	IR	22+	TO220	6000	終端可免費供樣,支持BOM配單	詢價
深圳市安富世紀電子有限公司	IRF640PBFC	IR	23+	TO220	8000	只做原裝現(xiàn)貨	詢價
天津市博通航睿技術(shù)有限公司	IRF640PBFC	IR	23+	TO220	7000		詢價
深圳市萊克訊科技有限公司	IRF640PBF-M	IR	1923+	TO-220	6896	原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨	詢價
深圳市仟禧電子有限公司	IRF640PBFMOS(場效應管)	VISHAY/威世	22+	TO-220	20000	深圳原裝現(xiàn)貨正品有單價格可談	詢價
深圳市威爾健半導體有限公司	IRF640PBFMOS(場效應管)	VISHAY/威世	23+	TO220	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳市湘達電子科技有限公司	IRF640PBFMOS(場效應管)	VISHAY/威世	2022+	TO-220AB	6600	只做原裝,假一罰十,長期供貨。	詢價
深圳廊盛科技有限公司	IRF640PBFMOS(場效應管)	VISHAY/威世	2022	TO220	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價
深圳市億順芯科技有限公司	IRF640PBFMOS(場效應管)	VISHAY/威世	22+	TO220	20000	硅原只售全新原裝,提供技術(shù)支持!	詢價
深圳市云美電子科技有限公司	IRF640PBFMOS(場效應管)	VISHAY/威世	22+	TO-220	37500	只做原裝進口現(xiàn)貨	詢價

更多IRF640PBFC供應商更新時間2024-11-16 14:00:00

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