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IRF9Z34PBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF9Z34PBF

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedP-Channel

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9Z34PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34S

PowerMOSFET(Vdss=-60V,Rds(on)=0.14ohm,Id=-18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF9Z34S

PowerMOSFET

FEATURES ?Advancedprocesstechnology ?Surfacemount(IRF9Z34S,SiHF9Z34S) ?175°Coperatingtemperature ?Fastswitching ?P-channel ?Fullyavalancherated ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesin

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34SPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34SPBF

SurfaceMount

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF9Z34SPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34STRL

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VBSEMI
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價(jià)
VBSEMI/臺(tái)灣微碧
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
VBSEMI/臺(tái)灣微碧
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IR
22+
TO-263
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
TO-263
7000
詢價(jià)
IR
22+
TO-220
21000
原廠原包裝。假一罰十?？砷_(kāi)13%增值稅發(fā)票。
 詢價(jià)
IR
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
VISHAY
23+
TO-220
19567
詢價(jià)
VISHAY
23+
TO220AB
7750
全新原裝優(yōu)勢(shì)
 詢價(jià)
Vishay
18+
NA
3846
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
更多IRF9Z34NS-VB供應(yīng)商 更新時(shí)間2025-1-25 9:00:00

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