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IRFBA22N50

PowerMOSFET(Vdss=500V,Rds(on)max=0.23ohm,Id=24A)

Applications 1.SwitchModePowerSupply(SMPS) 2.UninterruptiblePowerSupply 3.HighSpeedPowerSwitching Benefits 1.LowGateChargeQgresultsinSimpleDriveRequirement 2.ImprovedGate,AvalancheandDynamicdv/dtRuggedness 3.FullyCharacterizedCapacitan

IRF

International Rectifier

IRFBA22N50A

PowerMOSFET(Vdss=500V,Rds(on)max=0.23ohm,Id=24A)

Applications 1.SwitchModePowerSupply(SMPS) 2.UninterruptiblePowerSupply 3.HighSpeedPowerSwitching Benefits 1.LowGateChargeQgresultsinSimpleDriveRequirement 2.ImprovedGate,AvalancheandDynamicdv/dtRuggedness 3.FullyCharacterizedCapacitan

IRF

International Rectifier

IRFBA22N50APBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRFP22N50A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP22N50A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerS

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP22N50A

PowerMOSFET(Vdss=500V,Rds(on)max=0.23ohm,Id=22A)

Applications SwitchModePowerSupply(SMPS) UninterruptIblePowerSupply HighSpeedPowerSwitching Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent

IRF

International Rectifier

IRFP22N50A

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.23?(MAX) ?Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP22N50A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP22N50A

PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanchevoltage andcurrent ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP22N50APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP22N50APBF

HEXFETPowerMOSFET(VDSS=500V,RDS(on)max=0.23廓,ID=22A)

Applications SwitchModePowerSupply(SMPS) UninterruptIblePowerSupply HighSpeedPowerSwitching Lead-Free Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCur

IRF

International Rectifier

IRP22N50A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerS

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRP22N50APBF

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerS

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IXFH22N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH22N50P

PolarPowerMOSFETHiPerFET

Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?FastIntrinsicDiode ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Swit

IXYS

IXYS Corporation

IXFV22N50P

PolarPowerMOSFETHiPerFET

Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?FastIntrinsicDiode ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Swit

IXYS

IXYS Corporation

IXFV22N50PS

PolarPowerMOSFETHiPerFET

Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?FastIntrinsicDiode ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Swit

IXYS

IXYS Corporation

IXGH22N50B

HiPerFASTIGBT

VCES=500V IC(25)=44A VCE(sat)typ=2.1V tfi(typ)=55ns Features ?InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD ?HighfrequencyIGBT ?Highcurrenthandlingcapability ?HiPerFASTTMHDMOSTMprocess ?MOSGateturn-on

IXYS

IXYS Corporation

IXGH22N50BS

HiPerFASTIGBT

VCES=500V IC(25)=44A VCE(sat)typ=2.1V tfi(typ)=55ns Features ?InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD ?HighfrequencyIGBT ?Highcurrenthandlingcapability ?HiPerFASTTMHDMOSTMprocess ?MOSGateturn-on

IXYS

IXYS Corporation

IXTH22N50P

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

N-ChannelEnhancementModeAvalancheRated Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings Highpowerdensity

IXYS

IXYS Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
TO-220
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-220
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO-220
7000
詢價
IR/VISHAY
23+
TO-220
10000
公司只做原裝正品
 詢價
INFINEON/英飛凌
24+
TO220
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
 詢價
IR/VISHAY
24+
TO-TO-220
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
IR
23+
TO-220
35890
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
22+
TO-220
15000
絕對全新原裝現(xiàn)貨
 詢價
INFINEON/英飛凌
23+
TO-220
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價
更多IRFB22N50K供應(yīng)商 更新時間2024-12-27 14:00:00

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