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IRL3803

PowerMOSFET(Vdss=30V,Rds(on)=0.006ohm,Id=140A??

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRL3803

N-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤6m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRL3803L

PowerMOSFET(Vdss=30V,Rds(on)=0.006ohm,Id=140A??

Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides

IRF

International Rectifier

IRL3803LPBF

HEXFET?PowerMOSFET

Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides

IRF

International Rectifier

IRL3803LPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides

IRF

International Rectifier

IRL3803PBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRL3803PBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRL3803PBF

IRMOSFET?

Description FifthGenerationHEXFETsutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersilicon area.Thisbenefit,combinedwiththefastswitchingspeedand ruggedizeddevicedesignthatHEXFETPowerMOSFETsare wellknownfor,providesthedesignerwithanex

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRL3803S

PowerMOSFET(Vdss=30V,Rds(on)=0.006ohm,Id=140A??

Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides

IRF

International Rectifier

IRL3803S

Logic-LevelGateDrive

Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides

IRF

International Rectifier

IRL3803SPBF

HEXFET?PowerMOSFET

Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides

IRF

International Rectifier

IRL3803SPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides

IRF

International Rectifier

IRL3803SPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRL3803STRL

Logic-LevelGateDrive

Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides

IRF

International Rectifier

IRL3803STRRPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides

IRF

International Rectifier

IRL3803V

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRL3803V

N-ChannelMOSFETTransistor

?DESCRIPTION ?Combinewiththefastswitchingspeedandruggedizeddevice design,providethedesignerwithanextremelyefficientand reliabledeviceforuseinawidevarietyofapplications. ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤5.5m? ?Enhancementmode ?Fa

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRL3803VL

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRL3803VLPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRL3803VPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR/VISHAY
23+
TO-220
10000
公司只做原裝正品
詢價(jià)
IR
22+
TO-220
6000
十年配單,只做原裝
詢價(jià)
IR/VISHAY
23+
TO-220
6000
原裝正品,支持實(shí)單
詢價(jià)
IR
22+
SOT-3766&NBS
4500
全新原裝品牌專營
詢價(jià)
IR/VISHAY
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
IR
23+
TO-220
8000
只做原裝現(xiàn)貨
詢價(jià)
IR
23+
TO-220
7000
詢價(jià)
IR/VISHAY
24+
TO-TO-220
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
詢價(jià)
IR
16+
TO-220
10000
全新原裝現(xiàn)貨
詢價(jià)
23+
TO-220大
65480
詢價(jià)
更多IRFBA3803供應(yīng)商 更新時(shí)間2025-1-7 10:06:00