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首頁 >IRFC3710D>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFI3710	文件：161.21 Kbytes Page：8 Pages	HEXFETPowerMOSFET Through-HolePackags TO-220FullPak(FullyIsolated)	IRF International Rectifier	IRF
IRFN3710	文件：132.03 Kbytes Page：4 Pages	TRANSISTORN-CHANNEL(BVdss=100V,Rds(on)=0.028ohm,Id=45A) 100Volt,0.028?,HEXFET Generation5HEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignforwhichHEXFETsarewellknown,prov	IRF International Rectifier	IRF
IRFN3710	文件：46.66 Kbytes Page：2 Pages	N??HANNELPOWERMOSFET	SEME-LAB Seme LAB	SEME-LAB
IRFP3710	文件：185.43 Kbytes Page：8 Pages	PowerMOSFET(Vdss=100V,Rds(on)=0.025W,Id=57A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRFP3710	文件：334.79 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRITION ?Fastswitching ?FullyAvalancheRated ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤25m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFP3710PBF	文件：233.93 Kbytes Page：9 Pages	HEXFETPOWERMOSFET(VDSS=100V,RDS(on)=0.025廓,ID=57A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRFP3710PBF	文件：234.89 Kbytes Page：9 Pages	ADVANCEDPROCESSTECHNOLOGY	IRF International Rectifier	IRF
IRFR3710Z	文件：218.1 Kbytes Page：11 Pages	AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	IRF International Rectifier	IRF
IRFR3710Z	文件：335.72 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤18m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFR3710ZPBF	文件：275.12 Kbytes Page：11 Pages	AUTOMOTIVEMOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco	IRF International Rectifier	IRF
IRFR3710ZPBF	文件：688.61 Kbytes Page：13 Pages	HEXFET?PowerMOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IRFR3710ZPBF	文件：365.44 Kbytes Page：12 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF
IRFR3710ZPBF	文件：4.26598 Mbytes Page：11 Pages	AUTOMOTIVEMOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR3710ZPBF	文件：4.70307 Mbytes Page：12 Pages	HEXFETPowerMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR3710ZPBF	文件：4.26849 Mbytes Page：11 Pages	AUTOMOTIVEMOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR3710ZPBF	文件：365.44 Kbytes Page：12 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF
IRFR3710ZTRL	文件：4.70307 Mbytes Page：12 Pages	HEXFETPowerMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR3710ZTRLPBF	文件：365.44 Kbytes Page：12 Pages	HEXFET?PowerMOSFET	IRF International Rectifier	IRF
IRFR3710ZTRLPbF	文件：688.61 Kbytes Page：13 Pages	HEXFET?PowerMOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IRFR3710ZTRPBF	文件：365.44 Kbytes Page：12 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市安富世紀(jì)電子有限公司	IRFC3710D	INFINEON	23+	EA-CHIPSWAFERS	8000	只做原裝現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	IRFC3710D	INFINEON	23+	EA-CHIPSWAFERS	7000		詢價(jià)
深圳市科雨電子有限公司	IRFC3710ZEB	INFINEON	1503+	SMD	3000	就找我吧!--邀您體驗(yàn)愉快問購元件!	詢價(jià)
深圳市河鋒鑫科技有限公司	IRFC3710ZEB	Infineon Technologies	22+		9000	原廠渠道,現(xiàn)貨配單	詢價(jià)
深圳市芯福林電子科技有限公司	IRFC3710ZEB	Infineon Technologies	21+		13880	公司只售原裝,支持實(shí)單	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	IRFC3710ZEB	Infineon Technologies	23+		9000	原裝正品，支持實(shí)單	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	IRFC40	IR	23+	TO-220F	10000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)

更多IRFC3710D供應(yīng)商更新時(shí)間2025-1-1 15:00:00

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