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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IRFNL210B	文件：680.04 Kbytes Page：8 Pages	200VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFR210	文件：171.11 Kbytes Page：6 Pages	PowerMOSFET(Vdss=200V,Rds(on)=1.5ohm,Id=2.6A) DESCRIPTION ThirdGenerationMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraigh	IRF International Rectifier	IRF
IRFR210	文件：2.39965 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR210	文件：4.91599 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR210	文件：320.64 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IRFR210	文件：834.32 Kbytes Page：11 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR210,SiHFR210) ?Straightlead(IRFU210,SiHFU210) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR210A	文件：321.55 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IRFR210B	文件：655.26 Kbytes Page：9 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFR210BTF	文件：1.37366 Mbytes Page：5 Pages	N-channelEnhancementModePowerMOSFET Features ?VDS=200V,ID=30A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
IRFR210BTM	文件：1.37367 Mbytes Page：5 Pages	N-channelEnhancementModePowerMOSFET Features ?VDS=200V,ID=30A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
IRFR210PBF	文件：2.15484 Mbytes Page：10 Pages	HEXFETPOWERMOSFET	IRF International Rectifier	IRF
IRFR210PBF	文件：2.39965 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR210PBF	文件：4.91599 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR210PBF	文件：834.32 Kbytes Page：11 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR210TR	文件：2.39965 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR210TRA	文件：4.91599 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR210TRL	文件：2.39965 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR210TRLA	文件：4.91599 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR210TRLPBF	文件：2.39965 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR210TRLPBFA	文件：4.91599 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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詳細(xì)參數(shù)

型號(hào)：
IRFM210BTF
功能描述：
MOSFET 200V Single
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市高捷芯城科技有限公司	IRFM210BTF	onsemi(安森美)	23+	SOT-223-4	10613	支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。	詢(xún)價(jià)
深圳市華斯頓科技有限公司	IRFM210BTF	FSC	22+23+	SOT-223	28915	絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨	詢(xún)價(jià)
深圳市正邁科技有限公司	IRFM210BTF	FSC/ON	23+	原包裝原封 □□	8000	原裝進(jìn)口特價(jià)供應(yīng) QQ 1304306553 更多詳細(xì)咨詢(xún) 庫(kù)存	詢(xún)價(jià)
深圳市納艾斯科技有限公司	IRFM210BTF	FAIRCHI	2020+	SOT-223	80000	只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增	詢(xún)價(jià)
瀚佳科技(深圳)有限公司	IRFM210BTF	FAIRCHILD	24+		35200	一級(jí)代理/放心采購(gòu)	詢(xún)價(jià)
深圳市拓億芯電子有限公司	IRFM210BTF	FAIRCHILD/仙童	23+	SOT-223	30000	全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)	詢(xún)價(jià)
深圳市仟禧電子有限公司	IRFM210BTF	FAIRCHILD/仙童	22+	SOT223	20000	保證原裝正品,假一陪十	詢(xún)價(jià)
深圳市萊克訊科技有限公司	IRFM210BTF	FSC	1923+	SOT-223	6896	原裝進(jìn)口現(xiàn)貨庫(kù)存專(zhuān)業(yè)工廠研究所配單供貨	詢(xún)價(jià)
深圳市威爾健半導(dǎo)體有限公司	IRFM210BTF	FAIRCHILD/仙童	23+	SOT-223	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢(xún)價(jià)
京海半導(dǎo)體(深圳)有限公司	IRFM210BTF	FAIRCHILD/仙童	21+	SOT-223	10000	原裝現(xiàn)貨假一罰十	詢(xún)價(jià)

更多IRFM210BTF供應(yīng)商更新時(shí)間2025-1-7 13:44:00

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