首頁 >IRF9140N>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

IRFM9140

POWERMOSFETTHRU-HOLE(TO-254AA)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRF

International Rectifier

IRFM9140

SimpleDriveRequirements

IRF

International Rectifier

IRFN9140

POWERMOSFETSURFACEMOUNT(SMD-1)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRF

International Rectifier

IRFN9140

POWERMOSFETN-CHANNEL(BVdss=-100V,Rds(on)=0.20ohm,Id=-18A)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRF

International Rectifier

IRFN9140

SimpleDriveRequirements

IRF

International Rectifier

IRFN9140SMD

P-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFP9140

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP9140

19A,100V,0.200Ohm,P-ChannelPowerMOSFET

ThisisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.ItisaP-Channelenhancementmodesilicongatepowerfieldeffecttransistordesignedforapplicationssuchasswitchingregulators,switchingc

Intersil

Intersil Corporation

IRFP9140

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFP9140

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliablility

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFP9140

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP9140

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatash

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP9140

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-19A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP9140N

PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP9140N

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP9140N

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-23A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.117Ω(Max)@VGS=-10V DESCRIPTION ·Combinewiththefastswitchingspeedandruggedizeddevice design,providethedesignerwithanextremelyefficientand rel

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP9140NPBF

HEXFET?PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP9140NPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRFP9140PBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRFP9140PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IOR
24+
TO-247
2987
絕對全新原裝現(xiàn)貨供應(yīng)!
 詢價(jià)
IR
22+
SOT-2577&NBS
4500
全新原裝品牌專營
 詢價(jià)
IR
22+
RoHS: Compliant | pbFree: Yes
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
RoHS Compliant pbFree Yes Aud
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
RoHS Compliant pbFree Yes Aud
7000
詢價(jià)
IR
24+
TO-3
10000
詢價(jià)
IR
2015+
TO-3(鐵帽)
19889
一級代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
IR
23+
TO-3
3000
特價(jià)庫存
 詢價(jià)
IR
2023+
80000
一級代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
 詢價(jià)
IR
24+
35210
一級代理/放心采購
 詢價(jià)
更多IRF9140N供應(yīng)商 更新時(shí)間2025-1-14 16:23:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多