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IRF9Z34NSTRRPBF

AdvancedProcessTechnology

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IRF

International Rectifier

IRF9Z34PBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF9Z34PBF

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedP-Channel

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9Z34PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34S

PowerMOSFET(Vdss=-60V,Rds(on)=0.14ohm,Id=-18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF9Z34S

PowerMOSFET

FEATURES ?Advancedprocesstechnology ?Surfacemount(IRF9Z34S,SiHF9Z34S) ?175°Coperatingtemperature ?Fastswitching ?P-channel ?Fullyavalancherated ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesin

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34SPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34SPBF

SurfaceMount

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF9Z34SPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
21+
T0-263
6000
原裝正品
 詢價(jià)
IR
23+
TO-263
6000
專業(yè)優(yōu)勢(shì)供應(yīng)
 詢價(jià)
IR
17+
T0-263
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
IR
21+
T0-263
8820
原裝現(xiàn)貨假一賠十
 詢價(jià)
IR
1923+
T0-263
6896
原裝進(jìn)口現(xiàn)貨庫(kù)存專業(yè)工廠研究所配單供貨
 詢價(jià)
IR
2022+
SOT263
18000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
IR
23+
SOT263
6000
原裝正品，支持實(shí)單
 詢價(jià)
IR
21+
T0-263
9866
詢價(jià)
IR
0617P
T0-263
40
詢價(jià)
IR
23+
T0-263
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)!
 詢價(jià)
更多IRF9Z34NSTRPBF供應(yīng)商 更新時(shí)間2025-1-24 11:18:00

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