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IRFD9210

PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-0.40A)

DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerHEXFETdesignarchieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?D

IRF

International Rectifier

IRFD9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignarchieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. The4pinDIP

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9210

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?P-channel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION ThepowerMOSFETstechnolo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9210PBF

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignarchieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. The4pinDIP

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9210PBF

HEXFETPowerMOSFET

DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerHEXFETdesignarchieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?D

IRF

International Rectifier

IRFD9210PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE9210

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignersth

IRF

International Rectifier

IRFE9210

SimpleDriveRequirements

IRF

International Rectifier

IRFF9210

HEXFETTRANSISTORSTHRU-HOLE(TO-205AF)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtr

IRF

International Rectifier

IRFF9210

P-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
22+
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
7000
詢價(jià)
23+
65480
詢價(jià)
IR
05+
原廠原裝
4340
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
IR
23+
DIP-4
8238
詢價(jià)
IOR
24+
DIP-4P
158
詢價(jià)
IR
23+
DIP-4
3100
全新原裝現(xiàn)貨
 詢價(jià)
雷達(dá)
2020+
DIP-4
5200
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
IR
1816+
DIP-4
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價(jià)
更多IRFC9210供應(yīng)商 更新時(shí)間2025-1-25 14:00:00

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